Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field-effect transistors

2014 ◽  
Vol 65 (4) ◽  
pp. 526-531 ◽  
Author(s):  
Shinhyuk Choi ◽  
Jae-Gil Lee ◽  
Youngjin Kang ◽  
Ho-Young Cha ◽  
Hyungtak Kim ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Free Process ◽  
Heterostructure Field Effect Transistors ◽  
Gan On Si

High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

2005 ◽  
Vol 86 (14) ◽  
pp. 143512 ◽  
Author(s):  
R. S. Qhalid Fareed ◽  
X. Hu ◽  
A. Tarakji ◽  
J. Deng ◽  
R. Gaska ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Recessed Gate

Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

2003 ◽  
Vol 200 (1) ◽  
pp. 168-174 ◽  
Author(s):  
Narihiko Maeda ◽  
Takehiko Tawara ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi
Keyword(s):  
Electron Density ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
High Electron Density ◽  
Heterostructure Field Effect Transistors

(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

2015 ◽  
Vol 66 (1) ◽  
pp. 191-199 ◽  
Author(s):  
C.- F. Lo ◽  
O. Laboutin ◽  
C.- K. Kao ◽  
K. O'Connor ◽  
D. Hill ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrates ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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