A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs
2003 ◽
Vol 51
(11)
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pp. 2165-2174
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2015 ◽
Vol 14
(5-6)
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pp. 729-766
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1992 ◽
Vol 2
(11)
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pp. 442-444
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1995 ◽
Vol 131
(3)
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pp. 279-285
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Keyword(s):
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2010 ◽
Vol 31
(3)
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pp. 353-359