Noise characterization of Schottky barrier diodes for high-frequency mixing applications

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Aerodynamic Noise Characterization of a Full-Scale Wind Turbine through High-Frequency Surface Pressure Measurements

International Journal of Aeroacoustics ◽

10.1260/1475-472x.14.5-6.729 ◽

2015 ◽

Vol 14 (5-6) ◽

pp. 729-766 ◽

Cited By ~ 8

Author(s):

Franck Bertagnolio ◽

Helge Aa. Madsen ◽

Christian Bak ◽

Niels Troldborg ◽

Andreas Fischer

Keyword(s):

Wind Turbine ◽

Surface Pressure ◽

High Frequency ◽

Full Scale ◽

Aerodynamic Noise ◽

Pressure Measurements ◽

Noise Characterization

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Characterization of aluminum/LPCVD polysilicon Schottky barrier diodes

Solid-State Electronics ◽

10.1016/0038-1101(87)90192-4 ◽

1987 ◽

Vol 30 (3) ◽

pp. 339-343

Author(s):

Dao-Long Chen ◽

David W. Greve ◽

Alberto M. Guzman

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes

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Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Vacuum ◽

10.1016/s0042-207x(00)00131-7 ◽

2000 ◽

Vol 57 (2) ◽

pp. 219-228 ◽

Cited By ~ 105

Author(s):

B. Akkal ◽

Z. Benamara ◽

B. Gruzza ◽

L. Bideux

Keyword(s):

Schottky Barrier ◽

Interface States ◽

Schottky Barrier Diodes

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Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽

10.3390/electronics8050575 ◽

2019 ◽

Vol 8 (5) ◽

pp. 575 ◽

Cited By ~ 12

Author(s):

Yue Sun ◽

Xuanwu Kang ◽

Yingkui Zheng ◽

Jiang Lu ◽

Xiaoli Tian ◽

...

Keyword(s):

Gallium Nitride ◽

Schottky Barrier ◽

High Power ◽

High Frequency ◽

Recent Progress ◽

Schottky Barrier Diode ◽

Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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