Radiation-Induced Interface-State Generation in MOS Devices

AbstractIn this work we demonstrate that in MOS devices the reliability of ultrathin (< 100Å) gate oxide is a strong function of growth conditions, such as, temperature and the growth rate. In addition, for constant current gate injection the degradation of SiO2 is enhanced as the thickness is reduced. We attribute this to physical stress in SiO2 resulting from the growth process. The degradation is always more for those growth conditions which result in higher physical stress in SiO2. Higher temperatures and slower oxidation rates allow stress relaxation through viscous flow and hence result in SiO2 of better reliability. We also found that for constant current stressing, the interface damage is more at the collecting electrode than at the injecting electrode. ΔDit (stress induced interface state generation) can be reduced after a high temperature Ar post anneal after the gate oxide growth.

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Radiation‐induced interface‐state generation in reoxidized nitrided SiO2

Journal of Applied Physics ◽

10.1063/1.350390 ◽

1992 ◽

Vol 71 (2) ◽

pp. 1029-1031 ◽

Cited By ~ 7

Author(s):

V. Ramgopal Rao ◽

J. Vasi

Keyword(s):

Interface State ◽

State Generation ◽

Radiation Induced

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Ensemble Monte Carlo study of interface-state generation in low-voltage scaled silicon MOS devices

IEEE Transactions on Electron Devices ◽

10.1109/16.502424 ◽

1996 ◽

Vol 43 (7) ◽

pp. 1123-1132 ◽

Cited By ~ 18

Author(s):

J.J. Ellis-Monaghan ◽

R.B. Hulfachor ◽

K.W. Kim ◽

M.A. Littlejohn

Keyword(s):

Monte Carlo ◽

Low Voltage ◽

Monte Carlo Study ◽

Interface State ◽

Ensemble Monte Carlo ◽

Mos Devices ◽

State Generation

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Interface state generation induced by Fowler-Nordheim tunneling in mos devices

10.5353/th_b3122140 ◽

1999 ◽

Author(s):

Stella Li

Keyword(s):

Interface State ◽

Mos Devices ◽

State Generation ◽

Nordheim Tunneling

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The Investigation of Fluorine Effects on Charge Trapping and Interface State Generation in Mos Structures

MRS Proceedings ◽

10.1557/proc-219-825 ◽

1991 ◽

Vol 219 ◽

Author(s):

Dunxian D. Xie ◽

Ta-Cheng Lin ◽

Donald R. Young

Keyword(s):

Charge Trapping ◽

Interface State ◽

Flat Band ◽

Physical Damage ◽

Mos Devices ◽

Interface Charge ◽

State Generation ◽

Fluorinated Oxides ◽

Donor States ◽

Mos Structures

ABSTRACTThe bulk and interface charge trapping phenomena of fluorinated oxides have been studied by various electronic measurements. Fluorine is introduced into dry oxides by low energy (25kev) implantation followed by a 1000°C N2 ambient anneal to remove physical damage. Both the flat band and the mid gap voltage shifts of such MOS devices are measured during avalanche electron injection. We have developed techniques to separate effects due to interface state generation from bulk trapping effects. The bulk electron traps in the fluorinated oxides have a different cross section from the known water-related traps in conventional oxides. The generation of fast and slow interface states for different dosages of fluorine implantation is discussed based on Q-V and C-V measurements. The fast interface donor states, generated during avalanche injection, are charged at flat band but discharged at mid gap and beyond. An optimum dosage of fluorine implantation is found to suppress the so called turn-around effect during avalanche injection due to the formation of slow donor states. Finally, injection under high temperature (120°C-150°C) anneals out most of these donor states.

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