Fast-Response and Low-Afterglow Cerium-Doped Lithium 6 Fluoro-Oxide Glass Scintillator for Laser Fusion-Originated Down-Scattered Neutron Detection

2012 ◽  
Vol 59 (5) ◽  
pp. 2256-2259 ◽  
Author(s):  
Takahiro Murata ◽  
Yasunobu Arikawa ◽  
Kozue Watanabe ◽  
Kohei Yamanoi ◽  
Marilou Cadatal-Raduban ◽  
...  
2013 ◽  
Vol 362 ◽  
pp. 288-290 ◽  
Author(s):  
Kozue Watanabe ◽  
Yasunobu Arikawa ◽  
Kohei Yamanoi ◽  
Marilou Cadatal-Raduban ◽  
Takahiro Nagai ◽  
...  

Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.


The Analyst ◽  
2020 ◽  
Vol 145 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Wanda V. Fernandez ◽  
Rocío T. Tosello ◽  
José L. Fernández

Gas diffusion electrodes based on nanoporous alumina membranes electrocatalyze hydrogen oxidation at high diffusion-limiting current densities with fast response times.


2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...


2003 ◽  
Vol 50 (8) ◽  
pp. 1237-1244 ◽  
Author(s):  
M. K. Balakirev ◽  
V. A. Smirnov ◽  
L. I. Vostrikova ◽  
I. V. Kityk ◽  
J. Kasperczyk ◽  
...  
Keyword(s):  

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