Thermal Parameter Monitoring of IGBT Module Using Case Temperature

2019 ◽  
Vol 34 (8) ◽  
pp. 7942-7956 ◽  
Author(s):  
Jun Zhang ◽  
Xiong Du ◽  
Yu Wu ◽  
Quanming Luo ◽  
Pengju Sun ◽  
...  
Keyword(s):  
Thermal Parameter ◽  
Igbt Module ◽  
Parameter Monitoring

Thermal Parameter Monitoring of IGBT Module Using Junction Temperature Cooling Curves

2019 ◽  
Vol 66 (10) ◽  
pp. 8148-8160 ◽  
Author(s):  
Jun Zhang ◽  
Xiong Du ◽  
Yaoyi Yu ◽  
Shuai Zheng ◽  
Pengju Sun ◽  
...  
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Cooling Curves ◽  
Igbt Module ◽  
Parameter Monitoring

scholarly journals A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley
Keyword(s):  
Thermal Parameter ◽  
Junction Temperature ◽  
Collector Current ◽  
Insulated Gate Bipolar Transistor ◽  
Dependent Part ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Bond Wire ◽  
Separation Strategy

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

scholarly journals Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 441
Author(s):  
Marcello Cioni ◽  
Alessandro Bertacchini ◽  
Alessandro Mucci ◽  
Nicolò Zagni ◽  
Giovanni Verzellesi ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Driving Voltage ◽  
Drain Voltage ◽  
Current Increase ◽  
Mode Operation ◽  
Switch Mode ◽  
Gate Signal ◽  
A Current ◽  
Parameter Monitoring

In this paper, we investigate the evolution of threshold voltage (VTH) and on-resistance (RON) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-mode operation. A novel measurement setup for performing the required on-the-fly characterization is presented and the experimental results, obtained on commercially available TO-247 packaged SiC devices, are reported. Measurements were performed for 1000 s, during which negative VTH shifts (i.e., VTH decrease) and negative RON drifts (i.e., RON decrease) were observed. To better understand the origin of these parameter drifts and their possible correlation, measurements were performed for different (i) gate-driving voltage (VGH) and (ii) off-state drain voltage (VPH). We found that VTH reduction leads to a current increase, thus yielding RON to decrease. This correlation was explained by the RON dependence on the overdrive voltage (VGS–VTH). We also found that gate-related effects dominate the parameter drifts at low VPH with no observable recovery, due to the repeated switching of the gate signal required for the parameter monitoring. Conversely, the drain-induced instabilities caused by high VPH are completely recoverable within 1000 s from the VPH removal. These results show that the measurement setup is able to discern the gate/drain contributions, clarifying the origin of the observed VTH and RON drifts.

scholarly journals Thermal Parameter and State Estimation for Digital Twins of E-Powertrain Components

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Borja Rodriguez ◽  
Emilio Sanjurjo ◽  
Maurizio Tranchero ◽  
Claudio Romano ◽  
Francisco Gonzalez
Keyword(s):  
State Estimation ◽  
Thermal Parameter ◽  
Digital Twins
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