scholarly journals Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

2021 ◽  
Vol 36 (3) ◽  
pp. 3304-3311
Author(s):  
Peng Luo ◽  
Sankara Narayanan Ekkanath Madathil ◽  
Shin-Ichi Nishizawa ◽  
Wataru Saito
Keyword(s):  
Author(s):  
Hide Murayama ◽  
Makoto Yamazaki ◽  
Shigeru Nakajima

Abstract Power bipolar devices with gold metallization experience high failure rates. The failures are characterized as shorts, detected during LSI testing at burn-in. Many of these shorted locations are the same for the failed devices. From a statistical lot analysis, it is found that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure.


2004 ◽  
Vol 51 (6) ◽  
pp. 3172-3177 ◽  
Author(s):  
M.R. Shaneyfelt ◽  
J.R. Schwank ◽  
D.M. Fleetwood ◽  
R.L. Pease ◽  
J.A. Felix ◽  
...  

2004 ◽  
Vol 35 (3) ◽  
pp. 235-248 ◽  
Author(s):  
E.M. Sankara Narayanan ◽  
O. Spulber ◽  
M. Sweet ◽  
J.V.S.C. Bose ◽  
K. Verchinine ◽  
...  

1998 ◽  
Vol 45 (9) ◽  
pp. 2037-2046 ◽  
Author(s):  
N. Speciale ◽  
A. Leone ◽  
V. Graziano ◽  
G. Privitera

Author(s):  
H. Higuchi ◽  
G. Kitsukawa ◽  
T. Ikeda ◽  
Y. Nishio ◽  
N. Sasaki ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document