2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668)
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116

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0780377494

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

The application one-dimensional and quasi one-dimensional Thomas-Fermi equation for the modelling of an intra-atomic potential in the ultrathin gate dielectric

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283550 ◽

2004 ◽

Author(s):

G.Ya. Krasnikov ◽

N.A. Zaitsev ◽

I.V. Matyushkin

Keyword(s):

Gate Dielectric ◽

One Dimensional ◽

Atomic Potential ◽

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A pipelined serial data receiver with oversampling techniques for high-speed data communications

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283507 ◽

2004 ◽

Author(s):

Yih-Horng Lin ◽

S.H.-L. Tu

Keyword(s):

Data Communications ◽

Serial Data ◽

High Speed Data

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A two-dimensional analytical subthreshold behavior models for short-channel AlGaAs/GaAs HFETs

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283544 ◽

2004 ◽

Author(s):

T.K. Chiang ◽

Hsiu-Hung Su ◽

J.M. Lin

Keyword(s):

Two Dimensional ◽

Short Channel ◽

Behavior Models

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A highly scalable 2-bit asymmetric double-gate MOSFET nonvolatile memory

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283483 ◽

2004 ◽

Author(s):

Kam Hung Yuen ◽

Tsz Yin Man ◽

Mansun Chan

Keyword(s):

Nonvolatile Memory ◽

Double Gate ◽

Double Gate Mosfet

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The OP-amplifier with offset cancellation circuit

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283569 ◽

2004 ◽

Author(s):

Kyu-Tae Lim ◽

Seong-Joong Kim ◽

Oh-Kyong Kwon

Keyword(s):

Offset Cancellation

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Delay time constant analysis for f/sub τ/ optimization in RF Si/SiGe bipolar devices

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283541 ◽

2004 ◽

Author(s):

I.-S.M. Sun ◽

H.E. Xu ◽

R. Tam ◽

W.T. Ng ◽

H. Mochizuki ◽

...

Keyword(s):

Time Constant ◽

Bipolar Devices

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Thermal stability of Ni monosilicide formed with Ti capping layer

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283561 ◽

2004 ◽

Author(s):

Soo-Jin Park ◽

Keun-Woo Lee ◽

Jung-Joo You ◽

Ju-Youn Kim ◽

Kyoo-Sik Bae

Keyword(s):

Thermal Stability ◽

Capping Layer ◽

Thermal Stability Of ◽

Ti Capping Layer

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Smart MEMS concept for RF and millimeterwave communications

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283540 ◽

2004 ◽

Author(s):

D. Dubuc ◽

A. Coustou ◽

B. Ducarouge ◽

K. Grenier ◽

P. Pons ◽

...

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Spatial selectivity of impurity free vacancy disordering using different dielectric layers for photonic/optoelectronic integrated circuits

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283486 ◽

2004 ◽

Author(s):

L. Fu ◽

P. Lever ◽

H.H. Tan ◽

J. Wong-Leung ◽

P.N.K. Deenapanray ◽

...

Keyword(s):

Integrated Circuits ◽

Spatial Selectivity ◽

Optoelectronic Integrated Circuits ◽

Dielectric Layers ◽

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High performance radiation hardened register cell design on standard CMOS process

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283584 ◽

2004 ◽

Author(s):

Weizhong Wang

Keyword(s):

High Performance ◽

Cmos Process ◽

Cell Design ◽

Standard Cmos Process ◽

Radiation Hardened

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