Electromigration and Electrochemical Reaction Mixed Failure Mechanism in Gold Interconnection System
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Abstract Power bipolar devices with gold metallization experience high failure rates. The failures are characterized as shorts, detected during LSI testing at burn-in. Many of these shorted locations are the same for the failed devices. From a statistical lot analysis, it is found that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure.
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2017 ◽
Vol 45
(9)
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pp. 2098-2104
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2013 ◽
Vol 6
(4)
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pp. 266
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2020 ◽
Vol 99
(9)
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pp. 1039-1046
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2020 ◽
Vol 7
(Supplement_1)
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pp. S682-S683
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