Low-Power, Minimally Invasive Process Compensation Technique for Sub-Micron CMOS Amplifiers

Author(s):  
Mustansir Y. Mukadam ◽  
Oscar C. Gouveia-Filho ◽  
Nicholas Kramer ◽  
Xuan Zhang ◽  
Alyssa B. Apsel
Author(s):  
Urvashi Bansal ◽  
Maneesha Gupta ◽  
Niranjan Raj

The importance of a transimpedance amplifier in an optical transceiver is very well known. In this paper, a novel CMOS design of the bulk-driven transimpedance amplifier (BD-TIA) is given where the bridge-shunt peaking-based frequency compensation technique is exploited to improve frequency response. A pre-existing active inductor has been used for the same. The electrical characteristics and functioning of this inductor simulator make it a suitable alternative to both floating and grounded spiral inductors. In order to verify the workability of the proposed circuit, it has been simulated with TSMC CMOS 0.18[Formula: see text][Formula: see text]m process parameters. The proposed circuit is useful in low-voltage low-power VLSI applications as it uses a single supply of 0.75[Formula: see text]V. The power consumption of BD-TIA is very low, being 0.37[Formula: see text]mW, because a standard MOSFET has been replaced by a bulk-driven MOSFET (BDMOS), while the 3-dB bandwidth is observed to be 4.5[Formula: see text]GHz. The mathematical investigation and small signal analysis show that the simulation results are in good agreement.


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