Low contact resistivity (1.5×10−8 Ω-cm2) of phosphorus-doped Ge by in-situ chemical vapor deposition doping and laser annealing

2016 ◽  
Author(s):  
S.-H. Huang ◽  
F.-L. Lu ◽  
C. W. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Laser Annealing ◽  
Chemical Vapor ◽  
Contact Resistivity ◽  
Phosphorus Doped

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition

2020 ◽  
Vol 67 (11) ◽  
pp. 5053-5058
Author(s):  
Chung-En Tsai ◽  
Fang-Liang Lu ◽  
Yi-Chun Liu ◽  
Hung-Yu Ye ◽  
C. W. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Contact Resistivity

In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells

Solar Energy ◽  
2022 ◽  
Vol 231 ◽  
pp. 78-87
Author(s):  
Meriç Fırat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
María Recamán Payo ◽  
Filip Duerinckx ◽  
Loic Tous ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
Pressure Chemical ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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