The <inline-formula> <tex-math notation="LaTeX">${\sim } 3\,{\times } 10^{20}$ </tex-math></inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula> Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by <italic>In-Situ</italic> Chemical Vapor Deposition Doping and Laser Annealing

ABSTRACTWe report new Cr/Ni/Au and Ni/Cr/Au tri-layer metallization schemes for achieving low resistance ohmic contacts to moderately doped p- (∼1 × 1017/cm3), and n-GaN (∼1 × 1018/cm3) respectively. The metallizations were thermally evaporated on 2 μm-thick GaN layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Comparisons with bi-layer metallizations such as Ni/Au and Cr/Au were also made. The Cr/Ni/Au contacts showed a low specific contact resistivity of 9.1 × 10−5 Ω⋅cm2 to n-GaN while that of Ni/Cr/Au to p-GaN was 8.3 × 10−2 Ω⋅cm2. The Ni/Cr/Au contacts also showed a low specific contact resistivity of 2.6 × 10−4 Ω⋅cm2 to n-GaN. The Ni/Cr/Au metallization could made reasonable ohmic contacts to p- and n-GaN simultaneously

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In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc45281.2020.9300543 ◽

2020 ◽

Author(s):

Meric Firat ◽

Hariharsudan Sivaramakrishnan Radhakrishnan ◽

Maria Recaman Payo ◽

Filip Duerinckx ◽

Rajiv Sharma ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Phosphorus Doped

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Characterization of In Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

Journal of The Electrochemical Society ◽

10.1149/1.1838117 ◽

1997 ◽

Vol 144 (11) ◽

pp. 3952-3958 ◽

Cited By ~ 10

Author(s):

J. V. Grahn ◽

J. Pejnefors ◽

M. Sandén ◽

S.‐L. Zhang ◽

M. Östling

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Polycrystalline Silicon Films ◽

Phosphorus Doped

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Low Resistance Contacts to P-Type GaN

MRS Proceedings ◽

10.1557/proc-468-427 ◽

1997 ◽

Vol 468 ◽

Cited By ~ 37

Author(s):

Taek Kim ◽

Jinseok Khim ◽

Suhee Chae ◽

Taeil Kim

Keyword(s):

Vapor Deposition ◽

Ohmic Contacts ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Contact Resistivity ◽

Low Resistance ◽

Sapphire Substrates ◽

Specific Contact ◽

Specific Contact Resistivity ◽

P Type

ABSTRACTWe report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 × 10-3 Ω-cm2 was obtained after annealing. The metallization was e-beam evaporated on 2 μm-thick p-GaN (∼ 9 × 1016/cm3) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.

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Interface Effects with Ga0.47In0.53As Layers on InP Substrates Prepared by Organometallic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-18-145 ◽

1982 ◽

Vol 18 ◽

Author(s):

J. S. Whiteley ◽

S. K. Ghandhi

Keyword(s):

Chemical Vapor Deposition ◽

Hall Effect ◽

Electron Concentration ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hall Effect Measurements ◽

Inp Substrates ◽

Lattice Matched ◽

Interface Effects

Lattice-matched Ga0.47In0.53As was epitaxially grown on InP substrates by the reaction of triethylgallium, triethylindium and arsine. The mobility and carrier concentration in these layers were determined by sequential etch and Hall effect measurements made on the grown layers. These measurements show a considerable fall–off in mobility in the vicinity of the interface, accompanied by a rapid increase in electron concentration. In situ chloride etching of the substrate, prior to Ga–In–As growth, is shown to reduce significantly but not eliminate these interface effects. In this paper we outline possible reasons for these effects, based on measurements made on films grown with and without substrate etching and also on measurements of the effect of etching on the substrate itself.

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