Room-Temperature Quantum Sensing in CMOS: On-Chip Detection of Electronic Spin States in Diamond Color Centers for Magnetometry

Author(s):  
Mohamed I. Ibrahim ◽  
Christopher Foy ◽  
Donggyu Kim ◽  
Dirk R. Englund ◽  
Ruonan Han
Author(s):  
Christopher Foy ◽  
Donggyu Kim ◽  
Mohamed I. Ibrahim ◽  
Matthew Trusheim ◽  
Ruonan Han ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4092
Author(s):  
Gintaras Valušis ◽  
Alvydas Lisauskas ◽  
Hui Yuan ◽  
Wojciech Knap ◽  
Hartmut G. Roskos

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.


2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.


1986 ◽  
Vol 57 (6) ◽  
pp. 400-402 ◽  
Author(s):  
A.P. Shkadarevich ◽  
M.A. Dubinskii ◽  
M.V. Nikanovich ◽  
N.I. Silkin ◽  
D.S. Umreiko ◽  
...  

Photoniques ◽  
2021 ◽  
pp. 44-48
Author(s):  
Toeno Van Der Sar ◽  
Tim Hugo Taminiau ◽  
Ronald Hanson

Optically accessible spins associated with defects in diamond provide a versatile platform for quantum science and technology. These spins combine multiple key characteristics, including long quantum coherence times, operation up to room temperature, and the capability to create long-range entanglement links through photons. These unique properties have propelled spins in diamond to the forefront of quantum sensing, quantum computation and simulation, and quantum networks.


1972 ◽  
Vol 32 (4) ◽  
pp. 1152-1152 ◽  
Author(s):  
Ryoitiro Huzimura ◽  
Takeo Morishita ◽  
Makoto Noda

Nano Letters ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 4083-4090 ◽  
Author(s):  
Manfred Ersfeld ◽  
Frank Volmer ◽  
Pedro Miguel M. C. de Melo ◽  
Robin de Winter ◽  
Maximilian Heithoff ◽  
...  

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