Characterization of GaN HEMT Transistors for DC/DC Converters in Transportation Applications

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

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Nonlinear characterization of GaN HEMT

Journal of Semiconductors ◽

10.1088/1674-4926/31/11/114004 ◽

2010 ◽

Vol 31 (11) ◽

pp. 114004 ◽

Cited By ~ 7

Author(s):

Chi Chen ◽

Yue Hao ◽

Ling Yang ◽

Si Quan ◽

Xiaohua Ma ◽

...

Keyword(s):

Gan Hemt ◽

Nonlinear Characterization

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Characterization of Self-Heating Process in GaN-Based HEMTs

Electronics ◽

10.3390/electronics9081305 ◽

2020 ◽

Vol 9 (8) ◽

pp. 1305 ◽

Cited By ~ 1

Author(s):

Daniel Gryglewski ◽

Wojciech Wojtasiak ◽

Eliana Kamińska ◽

Anna Piotrowska

Keyword(s):

Communication Systems ◽

Accurate Determination ◽

Heating Process ◽

Equivalent Circuits ◽

High Electron ◽

Thermal Impedance ◽

Self Heating ◽

Gan Hemt

Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced measurement system based on DeltaVGS method with implemented software enabling accurate determination of device channel temperature and thermal resistance. The methodology accounts for MIL-STD-750-3 standard but takes into account appropriate specific bias and timing conditions. Three types of GaN-based HEMTs were taken into consideration, namely commercially available GaN-on-SiC (CGH27015F and TGF2023-2-01) and GaN-on-Si (NPT2022) devices, as well as model GaN-on-GaN HEMT (T8). Their characteristics of thermal impedance, thermal time constants and thermal equivalent circuits were presented. Knowledge of thermal equivalent circuits and electro–thermal models can lead to improved design of GaN HEMT high-power amplifiers with account of instantaneous temperature variations for systems using variable-envelope signals. It can also expand their range of application.

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Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology

Microelectronics Reliability ◽

10.1016/j.microrel.2011.07.003 ◽

2011 ◽

Vol 51 (9-11) ◽

pp. 1725-1729 ◽

Cited By ~ 16

Author(s):

M. Riccio ◽

A. Pantellini ◽

A. Irace ◽

G. Breglio ◽

A. Nanni ◽

...

Keyword(s):

Thermal Characterization ◽

Microstrip Technology ◽

Gan Hemt ◽

Silicon Microstrip

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Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.483.14 ◽

2011 ◽

Vol 483 ◽

pp. 14-17

Author(s):

Jian An Lv ◽

Zhen Chuan Yang ◽

Gui Zheng Yan ◽

Yong Cai ◽

Bao Shun Zhang ◽

...

Keyword(s):

Residual Stress ◽

Residual Stress Distribution ◽

Bending Test ◽

Output Current ◽

Micro Raman Spectroscopy ◽

Gan Hemt ◽

Gan Hemts ◽

Dry Etch ◽

Mems Process

In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ~ 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ~ 30 µm.

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