Genetic variation for resistance and acclimation to high temperature stress in Drosophila buzzatii

1994 ◽  
Vol 52 (1) ◽  
pp. 83-92 ◽  
Author(s):  
VOLKER LOESCHCKE ◽  
ROBERT A. KREBS ◽  
J. S. F. BARKER
HortScience ◽  
2020 ◽  
pp. 1-10
Author(s):  
Abbas Lafta ◽  
Germán Sandoya ◽  
Beiquan Mou

Lettuce (Lactuca sativa L.) is a cool season crop that is vulnerable to high temperature stress, which promotes bolting and decreases yield and quality. It is anticipated that climate change may lead to higher temperatures in current lettuce growing areas in the United States, thereby negatively affecting lettuce production and possibly resulting in adverse impacts on global food production. Therefore, it is important to identify lettuce germplasm with tolerance to temperatures higher than those that have occurred over the past century. We evaluated 25 crisphead lettuce cultivars for tolerance to high temperature stress in the San Joaquin, Imperial, and Salinas Valleys, CA. Genetic variation was identified for yield and horticultural traits, such as core length, head diameter, tipburn, bolting, and market maturity, of crisphead lettuce grown in warmer conditions. Significant genotype × environment interaction did not account for most of the variation; the main differences were found for environments and only a small proportion of the variation was due to genotypes. Cultivar Primetime is a good source of heat tolerance for crisphead lettuce, as it presented the best yield and exhibited other desirable characteristics across warmer conditions. These results provide insight into the cultivars that respond well to hot environments. Moreover, the data can be used by breeders to develop new heat-tolerant lettuce cultivars.


2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  

Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.


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