Decomposition Suppression of Silicon Nitride by Hexagonal Boron Nitride Nanocoatings

2009 ◽  
Vol 92 (3) ◽  
pp. 745-747 ◽  
Author(s):  
Guo-Jun Zhang
Nano Letters ◽  
2021 ◽  
Author(s):  
Khadija Yazda ◽  
Katarina Bleau ◽  
Yuning Zhang ◽  
Xavier Capaldi ◽  
Thomas St-Denis ◽  
...  

Author(s):  
F. Gutierrez-Mora ◽  
A. Erdemir ◽  
K. C. Goretta ◽  
A. Domi´nguez-Rodri´guez ◽  
J. L. Routbort

Water-lubricated friction and wear of silicon nitride (Si3N4) and Si3N4/hexagonal boron nitride (H-BN) fibrous monoliths (FM) were investigated using a ball-on-flat tribometer. The effect of the BN matrix on the overall sample tribological behavior is discussed and correlated to microstructural observations. Experimental data are compared to dry and oil-lubricated wear and friction in the same materials.


2019 ◽  
Vol 61 (12) ◽  
pp. 2327
Author(s):  
Д.С. Милахин ◽  
Т.В. Малин ◽  
В.Г. Мансуров ◽  
Ю.Г. Галицын ◽  
А.С. Кожухов ◽  
...  

In this work, the GaN nanocrystals formation on a graphene-like modification of AlN (g-AlN) and graphene-like silicon nitride (g-Si3N3) by ammonia molecular beam epitaxy was studied. The GaN growth on the g-Si3N3 surface was found to result in the misoriented nanocrystals formation. With the GaN growth on the g-AlN surface, epitaxial growth of the equally oriented GaN quantum dots with graphite-like modification was observed. The lattice parameters and the energy structure of two GaN graphite-like modifications with alternating layers AB (graphite structure) and AA’ (hexagonal boron nitride structure) were calculated. This work was supported by the Russian Foundation for Basic Research (№ 17-02-00947-Бел_а and 18-52-00008-а). This work was supported by the Belarusian Republican Foundation for Basic Research in the framework of the joint project Ф18Р-234.


2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.


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