Magnetic Properties of Mn-doped SnO2 Thin Films Prepared by the Sol-Gel Dip Coating Method for Dilute Magnetic Semiconductors

2014 ◽  
Vol 97 (10) ◽  
pp. 3184-3191 ◽  
Author(s):  
Sivashankaran Nair Sujatha Lekshmy ◽  
Vijayam Sukumaran Nair Anitha ◽  
PuthenKadathil Vargehese Thomas ◽  
Kunjkunju Joy
2019 ◽  
Vol 397 ◽  
pp. 8-12
Author(s):  
Mourad Khechba ◽  
Faouzi Hanini ◽  
Hichem Farh ◽  
Abderrahmane Bouabellou ◽  
Somia Gattal

In this paper, the influence of immersion time on the structural and optical properties of SnO2 thin films was investigated. A series of samples was deposited by Sol-Gel dip coating method onto glass substrates. The number of layers was fixed at 03, but the immersion time was varied between 01 to 10 minutes. The samples [(3 layers) - SnO2 / glass] were submitted to thermal treatments in air at 500°C during 2h. The specimens are characterized by Raman spectroscopy and UV-Visible spectroscopy. Raman spectroscopy show that the thin films of SnO2 obtained at 06 and 10 minutes of immersion time, are crystallizes in rutile phase. The obtained results of optical analysis showed that the SnO2 thin films are transparent (77-85%) in the visible region and the values of the optical band gap varied from 3.81eV and 3.86 eV.


2018 ◽  
Vol 06 (01n02) ◽  
pp. 1850001
Author(s):  
Abdelmalek Kharoubi ◽  
Amar Bouaza ◽  
Bedhiaf Benrabah ◽  
Abdelkader Ammari ◽  
Hadj Benhebal ◽  
...  

Undoped and Mn-doped TiO2 thin films have been prepared by sol–gel dip-coating technique on glass and silicon substrates. X-ray diffraction studies showed that both TiO2 and Mn-doped TiO2 thin films are of anatase phase with (101) as preferential orientation. All films exhibit high transparency ([Formula: see text]80%) over the visible range. The optical bandgap decreases from 3.66[Formula: see text]eV to 3.52[Formula: see text]eV due to the extent of electronic states introduced by doping. Infrared transmission spectra showed Ti–O (625[Formula: see text]cm[Formula: see text]) and Ti–O–Ti (495–436[Formula: see text]cm[Formula: see text]) bands. Thermal analysis revealed endothermic reactions between 94∘C and 110∘C and exothermic reactions between 406∘C and 443∘C. The Nyquist plots depicted that equivalent circuit of the films is an [Formula: see text] parallel. The resistance [Formula: see text] decreases while the capacitance [Formula: see text] increases with Mn-doping.


2012 ◽  
Vol 258 (7) ◽  
pp. 3255-3259 ◽  
Author(s):  
Shuai Chen ◽  
Xiaoru Zhao ◽  
Haiyan Xie ◽  
Jinming Liu ◽  
Libing Duan ◽  
...  

2017 ◽  
Vol 4 (9) ◽  
pp. 096403 ◽  
Author(s):  
Zohra N Kayani ◽  
Marya Siddiq ◽  
Saira Riaz ◽  
Shahzad Naseem

2012 ◽  
Vol 61 (12) ◽  
pp. 1925-1931 ◽  
Author(s):  
Sang-heon Lee ◽  
Wonshoup So ◽  
Jae Hak Jung ◽  
Giwoong Nam ◽  
Hyunggil Park ◽  
...  

2013 ◽  
Vol 667 ◽  
pp. 193-199 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
Mohamed Zahidi Musa ◽  
Mohd Zainizan Sahdan ◽  
Mohamad Rusop Mahmood

Recent research papers for zinc oxide (ZnO) thin films prepared by dip-coating method are reviewed. The aim is on the factors affecting the properties of ZnO thin films prepared by dip-coating method and the preparation of ZnO solution precursor using sol-gel process. Several of journals have been discovered to find out the related study on this topic. It was found that solution chemical equilibrium, substrate and thermal processing are the factors that contribute to the various properties of ZnO thin films. This review hopefully can help in improving the properties of ZnO thin film for possible applications to photoconductor, integrated sensor, transparent conducting oxide electrodes, optoelectronic devices and so on.


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