Sol–Gel Dip Coating Method Synthesis of Mn-Doped Titanium Dioxide Thin Films

2018 ◽  
Vol 06 (01n02) ◽  
pp. 1850001
Author(s):  
Abdelmalek Kharoubi ◽  
Amar Bouaza ◽  
Bedhiaf Benrabah ◽  
Abdelkader Ammari ◽  
Hadj Benhebal ◽  
...  

Undoped and Mn-doped TiO2 thin films have been prepared by sol–gel dip-coating technique on glass and silicon substrates. X-ray diffraction studies showed that both TiO2 and Mn-doped TiO2 thin films are of anatase phase with (101) as preferential orientation. All films exhibit high transparency ([Formula: see text]80%) over the visible range. The optical bandgap decreases from 3.66[Formula: see text]eV to 3.52[Formula: see text]eV due to the extent of electronic states introduced by doping. Infrared transmission spectra showed Ti–O (625[Formula: see text]cm[Formula: see text]) and Ti–O–Ti (495–436[Formula: see text]cm[Formula: see text]) bands. Thermal analysis revealed endothermic reactions between 94∘C and 110∘C and exothermic reactions between 406∘C and 443∘C. The Nyquist plots depicted that equivalent circuit of the films is an [Formula: see text] parallel. The resistance [Formula: see text] decreases while the capacitance [Formula: see text] increases with Mn-doping.

2014 ◽  
Vol 97 (10) ◽  
pp. 3184-3191 ◽  
Author(s):  
Sivashankaran Nair Sujatha Lekshmy ◽  
Vijayam Sukumaran Nair Anitha ◽  
PuthenKadathil Vargehese Thomas ◽  
Kunjkunju Joy

2012 ◽  
Vol 16 ◽  
pp. 105-111 ◽  
Author(s):  
Raouf Mechiakh ◽  
R. Gheriani ◽  
R. Chtourou

Titanium dioxide thin films have been prepared by the sol–gel dip-coating method on an ITO substrate. The samples obtained were characterized by different experimental techniques: XRD, Raman, FTIR, spectroscopy of the electrochemical potential and SEM. The X-ray diffraction results showed that the TiO2 thin film obtained for a layer, after a temperature of annealing (400°C) and at the speeds of steeping between 2 and 10 cm∙s-1 was amorphous, and transformed into anatase–brookite at 0.6 cm∙s-1 for 400°C. The data of Raman spectroscopy is in good agreement with the DRX results. Observation by scanning electron microscope shows that the coating was transparent and homogeneous without any visual cracking over a wide area, and the increase in the treatment temperature did not affect the uniformity of the film. The interface of our layers to behaved like a n-type semiconductor.


2012 ◽  
Vol 465 ◽  
pp. 165-171
Author(s):  
Jin Ming Liu ◽  
Xiao Ru Zhao ◽  
Li Bing Duan ◽  
Xiao Jun Bai ◽  
Ning Jin ◽  
...  

Anatase TiO2- thin films on glass substrates were prepared by sol-gel dip-coating method. We designed a multi-round annealing process which was under the air pressure of 5 Pa and then 5×10-2 Pa for one hour each at 550 °C, and such process was repeated for three times. The special designed annealing process can obviously improve the conductivity of the udoped TiO2- thin films. The minimum resistivity of the undoped TiO2- thin films reached 0.8 Ω cm after being treated by the multi-round annealing process. It was demonstrated that such annealing process was an effective way to increase the defects in TiO2- thin films such as oxygen vacancies. The average transmittances of the films were approximately 60~80% in the visible range with the forbidden gaps of 3.25~3.35 eV. After the multi-round annealing process, the optical forbidden gaps of the films became narrowed slightly, which might be also related to the defects introduced during the multi-annealing process.


2011 ◽  
Vol 233-235 ◽  
pp. 363-368
Author(s):  
Nitikarn Fangern ◽  
Sudjit Sanguanruang ◽  
Chamorn Chawengkijwanich

In this work, TiO2thin films were deposited on borosilicate glass substrates by sol-gel dip coating method and calcined at 500 °C for 15 min(heating rate3°C/min). The TiO2sol was prepared by fixing concentration of titaniumtetraisopropoxide(TTIP), TritonX-100 surfactant, ethanol and conc hydrochloric acid but amounts of acetyl acetone (Acac ) were various as 4, 6 and 8 mole respectively. After calcination process, all the TiO2thin films were homogeneous and transparent. Several techniques , such as X-ray diffraction (XRD), UV-Vis spectroscopy, Environment Scanning Electron Microscope (E-SEM), atomic force microscopy (AFM) and BET surface area analysis were used to characterize the prepared TiO2thin film. Spectra of XRD showed that the crystal structure was anatase phase with the crystal sizes of 9.05 – 12.57 nm. According to BET surface area analysis, the surface area , pore volume and pore size of TiO2were in the range of 66.35-82.53 m2/gm , 0.1194-0.1301 cm3/g and 57-71 A0respectively. The photodegradation of Reactive Blue 19 by the prepared TiO2thin films showed decomposition rate of 97.58% , 95.03 % and 94.48% for the thin films prepared by using 4, 6 and 8 mole AcAc respectively.


2017 ◽  
Vol 4 (9) ◽  
pp. 096403 ◽  
Author(s):  
Zohra N Kayani ◽  
Marya Siddiq ◽  
Saira Riaz ◽  
Shahzad Naseem

2009 ◽  
Vol 79-82 ◽  
pp. 1103-1106
Author(s):  
Hai Xia Hong ◽  
Yan Sheng Yin ◽  
Hong Feng Wang ◽  
Shou Gang Chen ◽  
Tao Liu ◽  
...  

Sol-gel TiO2 thin films undoped and doped with Ag-ions have been formed on 304ss by dip-coating method respectively. The Ag/TiO2 films are compact and have anatase phase with stable crystal structure and have a thickness of 50 nm approximately. The bactericidal rate of the Ag/TiO2 film against sulfate-reducing bacteria (SRB) strains reaches 97.1% when doping Ag+ with a percentage of 3%. The analysis of potentiodynamic polarization curves illustrates Ag/TiO2 film decreases the corrosion rate obviously.


2012 ◽  
Vol 61 (12) ◽  
pp. 1925-1931 ◽  
Author(s):  
Sang-heon Lee ◽  
Wonshoup So ◽  
Jae Hak Jung ◽  
Giwoong Nam ◽  
Hyunggil Park ◽  
...  

2013 ◽  
Vol 667 ◽  
pp. 193-199 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
Mohamed Zahidi Musa ◽  
Mohd Zainizan Sahdan ◽  
Mohamad Rusop Mahmood

Recent research papers for zinc oxide (ZnO) thin films prepared by dip-coating method are reviewed. The aim is on the factors affecting the properties of ZnO thin films prepared by dip-coating method and the preparation of ZnO solution precursor using sol-gel process. Several of journals have been discovered to find out the related study on this topic. It was found that solution chemical equilibrium, substrate and thermal processing are the factors that contribute to the various properties of ZnO thin films. This review hopefully can help in improving the properties of ZnO thin film for possible applications to photoconductor, integrated sensor, transparent conducting oxide electrodes, optoelectronic devices and so on.


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