High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition

2017 ◽  
Vol 101 (3) ◽  
pp. 1048-1057 ◽  
Author(s):  
Qingyun Sun ◽  
Peipei Zhu ◽  
Qingfang Xu ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
1989 ◽  
Vol 65 (6) ◽  
pp. 2470-2474 ◽  
Author(s):  
B. Markwalder ◽  
M. Widmer ◽  
D. Braichotte ◽  
H. van den Bergh

2013 ◽  
Vol 97 (3) ◽  
pp. 952-958 ◽  
Author(s):  
Song Zhang ◽  
Qingfang Xu ◽  
Rong Tu ◽  
Takashi Goto ◽  
Lianmeng Zhang

2012 ◽  
Vol 508 ◽  
pp. 199-202
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto

Ba2TiO4 and Ba4Ti13O30 Thick Films Were Prepared by Laser Chemical Vapor Deposition Using Ba- and Ti-Dipivaloylmethanate Precursors. Single-Phase Ba2TiO4 Thick Films Were Obtained at 845–946 K and Ba/Ti Source Molar Ratio 2.4. Single-Phase Ba4Ti13O30 Films Were Obtained at 944–1011 K and Ba/Ti Source Molar Ratio 0.38. Ba2TiO4 Thick Films Consisted of Truncated Grains, while Ba4ti13o30 Thick Films Had Shellfish-Like Grains. Ba2TiO4 and Ba4Ti13O30 Thick Films Showed a Columnar Growth and their Deposition Rates Were 72 and 132 μm h−1, Respectively.


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