scholarly journals Optical properties of Diamond like Carbon films prepared by DC-PECVD

2014 ◽  
Vol 8 (2) ◽  
Author(s):  
S. Tshomo ◽  
A.K. Mohsin ◽  
B. Ismail ◽  
R. Hussin ◽  
M.n. Md.Yusuf ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Light Transmission ◽  
Optical Transition ◽  
Carbon Films ◽  
Hydrogen Gas ◽  
Diamond Like Carbon ◽  
Indirect Transition ◽  
Vis Spectroscopy ◽  
Higher Temperature ◽  
Substrate Temperatures

Diamond-like carbon (DLC) thin films were deposited at different substrate temperatures using methane and hydrogen gas in DC-PECVD at 2x10-1Torr. From the light transmission using UV-VIS spectroscopy it was found that the optical transition had changed from allowed indirect transition to allowed direct transition as the substrate temperature increased. The Optical gap increased with temperature, highest of 3.034 eV was observed at 573 K, beyond which it dropped. Colour of the film changed from light brownish to a colourless transparent film in the higher temperature. The Urbach energy decreased from 1.25 eV to 0.75 eV with increasing substrate temperature till 573 K and a slight increase after it. This trend is attributed to change in sp3/sp2 ratio or change in structure. The cluster size decreases with temperature, resulting in larger band gap and the structure more ordered. Similar pattern is also witnessed in the emission spectrum of the photoluminescence.

scholarly journals Optical properties of diamond-like carbon thin films deposited by DC-PECVD

2014 ◽  
Vol 7 (1) ◽  
Author(s):  
Karim Deraman ◽  
Suriany Sarmid ◽  
Bakar Ismail ◽  
N.E. Ahmad ◽  
R. Hussin ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Urbach Energy ◽  
Optical Transition ◽  
Diamond Like Carbon ◽  
Indirect Transition ◽  
Band Tail ◽  
Peak Energy ◽  
Vis Spectroscopy ◽  
Substrate Temperatures

Diamond-like carbon (DLC) thin films were deposited at different substrate temperatures using methane gas in DC-PECVD at 1x10-1 Torr. From the lighttransmission using UV-VIS spectroscopy it was found that the optical transition had changed from allowed indirect transition to forbidden directtransition as the substrate temperature increased. The photoluminescence study has shown that the recombination centre occurred at 1.738 eV. Theobservation in the present work shows that the Urbach energy decreases with increasing substrate temperature provides evidence that such films have anarrowed band tail. This decrease in Urbach energy is due to a more ordered structure with lower hydrogen concentration and larger cluster by theincrease in the degree of cross-linking of the C-C network. Distorted cluster which contribute to the broadening of the band tail may also contribute to thePL peak width. As the substrate temperature increases, the cluster size in the tetrahedral hydrogenated amorphous carbon (ta-C:H) increases, resulting insmaller band gap and the structure is more ordered as the decrease in Urbach energy, give the decrease in PL peak energy.

Effect of Substrate Temperature on Structural and Optical Properties of Un-Doped Diamond Thin Film

2014 ◽  
Vol 903 ◽  
pp. 108-113
Author(s):  
Ong Wai Kit ◽  
Karim bin Deraman ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Jackie Chen Keng Yik
Keyword(s):  
Surface Roughness ◽  
Substrate Temperature ◽  
Optical Transition ◽  
Chemical Vapour ◽  
Indirect Transition ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Diamond Thin Film ◽  
Direct Current Plasma ◽  
Substrate Temperatures

Un-doped diamond thin films were deposited at various substrate temperatures (from 300 °C to 500 °C) onto glass substrates by using direct current plasma enhanced chemical vapour deposition (DC-PECVD) system. The fabricated films were having amorphous phase which shown by X-ray diffraction (XRD). Atomic force microscopy (AFM) has discovered that the RMS surface roughness and the thickness which were obtained in the range of 0.69 nm to 1.67 nm and 4.8 nm to 0.83 nm, respectively as increasing substrate temperatures. From UV visible spectroscopy (UV-VIS), it was found that the optical transition had changed from forbidden indirect transition to allowed indirect transition as the substrate temperature increased. The optical band gaps were increased (3.14 eV, 3.93 eV and 4.09 eV) when the substrate temperatures increased. Hence, the higher the substrate temperatures, the larger the cluster size and RMS surface roughness and result in decreasing of films thickness and increasing the optical band gap.

Properties of carbon films deposited by pulsed laser vaporization from pyrolytic graphite

1989 ◽  
Vol 4 (5) ◽  
pp. 1238-1242 ◽  
Author(s):  
A. P. Malshe ◽  
S. M. Chaudhari ◽  
S. M. Kanetkar ◽  
S. B. Ogale ◽  
S. V. Rajarshi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pyrolytic Graphite ◽  
Carbon Films ◽  
Laser Vaporization ◽  
Film Properties ◽  
Amorphous Carbon Films ◽  
Resistivity Measurements ◽  
Laser Raman ◽  
Quartz Substrates ◽  
Substrate Temperatures

Amorphous carbon films have been deposited on silicon 〈111〉 and quartz substrates by pulsed ruby laser vaporization from pyrolytic graphite. Depositions have been carried out at different substrate temperatures, and the properties of the deposited carbon films have been studied using IR and UV–VIS transmission, ellipsometry, and laser-Raman spectroscopies. Chemical and electrical resistivity measurements have also been performed. It is shown that the film properties depend critically on the substrate temperature and that at the substrate temperature of 50 °C films with substantial proportion of sp3 hybridized orbitals are obtained.

Influence of the Substrate Temperature upon the Diamond-Like Carbon Films Deposited by Pulsed Laser

2010 ◽  
Vol 37 (8) ◽  
pp. 2063-2067
Author(s):  
罗乐 Luo Le ◽  
赵树弥 Zhao Shumi ◽  
仇冀宏 Qiu Jihong ◽  
方尚旭 Fang Shangxu ◽  
方晓东 Fang Xiaodong ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Diamond Like Carbon

Influence of Substrate Temperature on Deposition Rate and Optical Properties of Aluminum Oxide Thin Films Prepared by Reactive DC Sputtering Technique

2016 ◽  
Vol 675-676 ◽  
pp. 281-284
Author(s):  
Chatpawee Hom-On ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Sakson Limwichean ◽  
Viyapol Patthanasetakul ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Aluminum Oxide ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Oxide Films ◽  
Chemical Compositions ◽  
Transmittance Spectra ◽  
Vis Spectroscopy ◽  
Substrate Temperatures

Aluminum oxide films were grown on (100) silicon wafers and glass substrates by pulsed dc reactive magnetron sputtering deposition. In this experiment, substrate temperatures were varied from room temperature to 500°C. Grazing-incidence X-ray diffraction (GIXRD) analysis revealed that the resulting films have amorphous structures. Field-emission scanning electron microscope (FESEM) was used to characterize the morphology of the films. The films’ optical properties were determined by UV-Vis spectroscopy. The results demonstrated that the deposition rate, the surface roughness and the transmittance spectra of the aluminum oxide films were strongly influenced by the substrate temperature. The deposition rate and the surface roughness of the films were higher at higher substrate temperatures. In the range between 100°C and 200°C, the transmittance spectra were found to be lower than those of the films deposited at other substrate temperatures. This was due to the sub-aluminum oxide condition in the films. The dependence of films’ optical properties on the substrate temperature might result from the change in chemical compositions during the sputtering process.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

EFFECT OF SUBSTRATE TEMPERATURE ON THE GROWTH OF COPPER OXIDE THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION TECHNIQUE

2018 ◽  
Vol 25 (02) ◽  
pp. 1850053 ◽  
Author(s):  
MUHAMMAD KAIF SHABBIR ◽  
SHAZIA BASHIR ◽  
QAZI SALMAN AHMED ◽  
NAZISH YASEEN ◽  
SOHAIL ABDUL JALIL ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Copper Oxide ◽  
Growth Temperature ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Oxide Thin Films ◽  
Vis Spectroscopy ◽  
Substrate Temperatures ◽  
Deposited Films

The effect of substrate temperature on growth of pulsed laser deposited copper oxide thin films has been investigated by employing Nd: YAG laser (532[Formula: see text]nm, 6[Formula: see text]ns, 10[Formula: see text]Hz) irradiation at a fluence of 8.2[Formula: see text]J/cm2. XRD analysis reveals that copper oxide films deposited at room temperature are amorphous in nature, whereas films deposited at higher substrate temperatures are polycrystalline in nature. SEM and AFM analyses revealed that films deposited at substrate temperatures, ranging from room temperature to 300[Formula: see text]C are comprised of large sized clusters, islands and particulates, whereas uniform films with an appearance of granular morphology and distinct bump formation are grown at higher substrate temperatures of 400[Formula: see text]C and 500[Formula: see text]C. The optical bandgap of deposited films is evaluated by UV-VIS spectroscopy and shows a decreasing trend with increasing substrate temperature. Four point probe analysis reveals that electrical conductivity of the deposited films increases with increase in the substrate temperature, and is maximum for highest growth temperature of 500[Formula: see text]C. It is revealed that growth temperature plays a significant role for structure, texture, optical and electrical behavior of copper oxide thin films. The surface and structural properties of the deposited films are well correlated with their electrical and optical response.

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