Strength and Adhesion of Thin Aluminum Oxide Film Deposited on Iron Surface

1993 ◽  
Vol 115 (4) ◽  
pp. 615-619 ◽  
Author(s):  
M. Nakanishi ◽  
H. Okuya ◽  
K. Nakajima

The strength of deposited film and the adhesion between the film and the substrate were investigated with deposited aluminum oxide film on iron surface by scratching the surface with a diamond cone. Two types of samples were examined, one with oxide film deposited after cleaning the substrate surface by sputter etching, the other with the film deposited without any sputter etching. It was found that a law similar to Meyers’ for indentation hardness holds between the load and scratch width on the sample examined. These results suggest that by analyzing the scratch data the adhesion strength of the film to the substrate can be estimated together with the hardness of the film itself. Analyses by EPMA (electron probe X-ray microanalyzer) and AES (Auger electron spectroscopy) were conducted to correlate the results obtained by the scratch tests and friction experiments, and it was confirmed that (i) adhesion is improved by sputter etching prior to the deposition of the film; (ii) adhesion decreases considerably due to the progress of oxidation in the vicinity of the interface, which depends markedly on the oxygen concentration in the oxide film; and (iii) there is an optimum thickness of the three-component layer (Fe, Al, and O) formed by atomic mixing at the interface for maximizing the adhesion.

1991 ◽  
Vol 69 (3-4) ◽  
pp. 278-283 ◽  
Author(s):  
Qi-Hua Zhang ◽  
C. H. Champness

Amorphous selenium is often used as the basic photoreceptor material in xerography in the form of a layer on an aluminum substrate. It is found that the dark decay rate of charge on the selenium surface can be reduced by the presence of a thin aluminum oxide film between the selenium and the substrate metal. In this study, different methods were explored for forming this film, including direct thermal oxidation and various glow-discharge methods. It was found that with thermal oxidation and low voltage glow discharge, the film thicknesses were limited to about 200 Å (1 Å = 10−10 m). However, with dc reactive sputtering, aluminum oxide films with thicknesses of more than 2000 Å could be prepared. Evaluation of the films, with the selenium layer present, indicated that the low voltage glow-discharge and direct thermal oxidation methods gave the best results xerographically.


2007 ◽  
Vol 10 (12) ◽  
pp. C69 ◽  
Author(s):  
Ching-Jung Yang ◽  
Shih-Wei Liang ◽  
Pu-Wei Wu ◽  
Chih Chen ◽  
Jia-Min Shieh

Science ◽  
2005 ◽  
Vol 308 (5727) ◽  
pp. 1440-1442 ◽  
Author(s):  
G. Kresse

2016 ◽  
Vol 51 (7) ◽  
pp. 965-969 ◽  
Author(s):  
Daniel Choi ◽  
Boo Hyun An ◽  
Mariam Mansouri ◽  
Dima Ali ◽  
Malathe Khalil ◽  
...  

We have designed and demonstrated a complementary metal-oxide-semiconductor compatible process for fabricating high capacitance micro-capacitors based on vertically grown silver nanowires on silicon substrates. Array of silver nanowires with high-aspect ratio were electrochemically grown in the pores of anodized aluminum oxide film, which was pre-formed through anodization of aluminum thin film deposited on titanium/silicon oxide/silicon substrates. High dielectric bismuth ferric oxide layer was electrodeposited to fill the gap between silver nanowires after anodized aluminum oxide film was removed. It was found that the micro-capacitor based on the silver nanowires/bismuth ferric oxide composite film possessed higher capacitance by approximately one order of magnitude from the COMSOL simulation results from the flat Ag thin-film capacitor and the silver nanowire capacitor.


2020 ◽  
pp. 110567
Author(s):  
T. Lertvanithphol ◽  
P. Limnonthakul ◽  
C. Hom-on ◽  
P. Jaroenapibal ◽  
C. Chananonnawathorn ◽  
...  

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