ArF Excimer Laser Micromachining of MEMS Materials: Characterization and Applications

2014 ◽  
Vol 2 (2) ◽  
Author(s):  
Kewei Liu ◽  
Yoontae Kim ◽  
Hongseok (Moses) Noh

Excimer laser ablation is a versatile technique that can be used for a variety of different materials. Excimer laser ablation overcomes limitations of conventional two-dimensional (2D) microfabrication techniques and facilitates three-dimensional (3D) micromanufacturing. Previously, we have reported a characterization study on 248 nm KrF excimer laser micromachining. This paper extends the study to 193 nm ArF excimer laser micromachining on five representative micro-electro-mechanical systems (MEMS) materials (Si, soda-lime glass, SU-8, polydimethylsiloxane (PDMS), and polyimide). Relations between laser parameters (fluence, frequency and number of laser pulses) and etch performances (etch rates, aspect ratio, and surface quality) were investigated. Etch rate per shot was proportional to laser fluence but inversely proportional to number of laser pulses. Laser frequency did not show a notable impact on etch rates. Aspect ratio was also proportional to laser fluence and number of laser pulses but was not affected by laser frequency. Materials absorbance spectrum was found to have important influence on etch rates. Thermal modeling was conducted as well using numerical simulation to investigate how the photothermal ablation mechanism affects the etching results. Thermal properties of material, primarily thermal conductivity, were proved to have significant influence on etching results. Physical deformation in laser machined sites was also investigated using scanning electron microscopy (SEM) imaging. Element composition of redeposited materials around ablation site was analyzed using energy dispersive x-ray spectroscopy (EDXS) analysis. Combined with our previous report on KrF excimer laser micromachining, this comprehensive characterization study provides guidelines to identify optimized laser ablation parameters for desired microscale structures on MEMS materials. In order to demonstrate the 3D microfabrication capability of ArF excimer laser, cutting and local removal of insulation for a novel floating braided neural probe made of polyimide and nichrome was conducted successfully using the optimized laser ablation parameters obtained in the current study.

2015 ◽  
Vol 780 ◽  
pp. 29-32 ◽  
Author(s):  
M.Z. Zainol ◽  
Yufridin Wahab ◽  
H. Fazmir ◽  
A.F.M. Anuar ◽  
S. Johari ◽  
...  

Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures.The objective of this study is to investigate the relation between the number of laser pulses, number of laser passes through the channel of ablation site and their etch performance. Parameters such as frequency, fluence and velocity were retained as constants. In this paper, we present a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the two major laser parameters (Number of laser pulses and number of laser passes) were varied. Both parameters were showing declination profile however from comparing both graphs, it showed that etch rate dropped more steeply when varied number of laser passes rather than number of pulses.


1993 ◽  
Vol 13 (2) ◽  
pp. 204-210 ◽  
Author(s):  
M. N. Ediger ◽  
G. H. Pettit ◽  
R. P. Weiblinger ◽  
C. H. Chen

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 6084-6091 ◽  
Author(s):  
Masamitsu Haruna ◽  
\ast ◽  
Hideki Ishizuki ◽  
Jun Tsutsumi ◽  
Yusaku Shimaoka ◽  
...  

1995 ◽  
Vol 34 (Part 2, No. 9A) ◽  
pp. L1145-L1147 ◽  
Author(s):  
Minoru Tachiki ◽  
Masahiro Matsutani ◽  
Tatsuhiko Fujii ◽  
Yoshiyuki Sakaguchi ◽  
Takeshi Kobayashi

1991 ◽  
Vol 236 ◽  
Author(s):  
Gary A. Smith ◽  
Li-Chyong Chen ◽  
Mei-Chen Chuang

AbstractSystematic experiments have been carried out to characterize the yttria containing zirconia thin films on sapphire substrates by 248nm KrF excimer laser ablation. The deposition rate as a function of laser fluence and O2 pressure at room temperature was measured with a quartz crystal microbalance. The results show different threshold fluences for deposition in vacuum vs. oxygen. While the deposition rate increases with increasing fluence at a given oxygen pressure, the rate eventually saturates at a higher laser fluence. At a given fluence, the oxygen pressure dependence of the deposition rate shows a radical reduction when the O2 pressure increases from 10 mTorr to 1 Torr. Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy were used to obtain stoichiometric information. A very strong pressure dependence of the O/Zr ratio was observed. While the trend of increasing O/Zr and Zr/Y ratio with increasing O2 pressure is apparent, the correlations between O/Zr as well as Zr/Y ratio and other processing conditions are less obvious. RBS results indicate an increasing roughness at the interface between the ZrO2 film and the sapphire substrate as the oxygen pressure exceeds 50 mTorr. The structural information obtained from x-ray diffraction patterns indicates broadening of peak width with increasing laser fluence as well as decreasing substrate temperature. For the film deposited at a lower substrate temperature, a strong (002) texture was observed.


1998 ◽  
Vol 526 ◽  
Author(s):  
Kenji Ebihara ◽  
Hiromnitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Alexander M. Grishin

AbstractThe perovskite oxide YBa2Cu3O7-x (YBCO) and Pb(ZrxTi1-x)O3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200-600mTorr O2, 2-3J/cm2 and 5-10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO3:Nd show the zero resistivity critical temperature of 82K and excellent ferroelectric properties of remnant polarization 32 μC/cm2, coercive force of 80kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed.


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