Topological Characterization of an Evolving Product Structure Network: A Case Study of Generational Smartphone Products

2019 ◽  
Vol 141 (9) ◽  
Author(s):  
Kijung Park ◽  
Gül E. Okudan Kremer

Products evolve over time to satisfy new customer needs, technologies, and markets. The evolution process of products necessarily involves changes in a product structure that might be characterized by inherent evolving properties. Although product evolution has been discussed from various perspectives, the underlying properties of an evolving product structure have not been sufficiently explored from an analytical view. Various empirical and theoretical studies in network science show that real networks representing different types of complex systems are not randomly structured but are characterized by certain properties regardless of their origins. Focusing on the topological universality of real networks, this study aims to reveal the inherent evolving properties of a product structure based on a network science approach through a case study of generational smartphone models. First, the product structure of each generational product is represented as a product structure network. Then, topological characteristics and patterns in each network are analyzed by network measures and motifs. The results show that the product structure networks may follow the universal properties observed in other real networks; the product structure grows as a scale-free network with common building blocks. The findings from this study suggest that the identified properties can be used as a basis to understand and formulate product evolution to obtain design benefits from topological robustness and modularity.

2006 ◽  
Vol 17 (09) ◽  
pp. 1303-1311 ◽  
Author(s):  
SUMIYOSHI ABE ◽  
STEFAN THURNER

The Erdös–Rényi classical random graph is characterized by a fixed linking probability for all pairs of vertices. Here, this concept is generalized by drawing the linking probability from a certain distribution. Such a procedure is found to lead to a static complex network with an arbitrary connectivity distribution. In particular, a scale-free network with the hierarchical organization is constructed without assuming any knowledge about the global linking structure, in contrast to the preferential attachment rule for a growing network. The hierarchical and mixing properties of the static scale-free network thus constructed are studied. The present approach establishes a bridge between a scalar characterization of individual vertices and topology of an emerging complex network. The result may offer a clue for understanding the origin of a few abundance of connectivity distributions in a wide variety of static real-world networks.


Entropy ◽  
2021 ◽  
Vol 23 (2) ◽  
pp. 160
Author(s):  
Chathurani Senevirathna ◽  
Chathika Gunaratne ◽  
William Rand ◽  
Chathura Jayalath ◽  
Ivan Garibay

Influence cascades are typically analyzed using a single metric approach, i.e., all influence is measured using one number. However, social influence is not monolithic; different users exercise different influences in different ways, and influence is correlated with the user and content-specific attributes. One such attribute could be whether the action is an initiation of a new post, a contribution to a post, or a sharing of an existing post. In this paper, we present a novel method for tracking these influence relationships over time, which we call influence cascades, and present a visualization technique to better understand these cascades. We investigate these influence patterns within and across online social media platforms using empirical data and comparing to a scale-free network as a null model. Our results show that characteristics of influence cascades and patterns of influence are, in fact, affected by the platform and the community of the users.


PLoS ONE ◽  
2021 ◽  
Vol 16 (7) ◽  
pp. e0254384
Author(s):  
Nicola Amoroso ◽  
Loredana Bellantuono ◽  
Saverio Pascazio ◽  
Alfonso Monaco ◽  
Roberto Bellotti

Network connectivity has been thoroughly investigated in several domains, including physics, neuroscience, and social sciences. This work tackles the possibility of characterizing the topological properties of real-world networks from a quantum-inspired perspective. Starting from the normalized Laplacian of a network, we use a well-defined procedure, based on the dressing transformations, to derive a 1-dimensional Schrödinger-like equation characterized by the same eigenvalues. We investigate the shape and properties of the potential appearing in this equation in simulated small-world and scale-free network ensembles, using measures of fractality. Besides, we employ the proposed framework to compare real-world networks with the Erdős-Rényi, Watts-Strogatz and Barabási-Albert benchmark models. Reconstructed potentials allow to assess to which extent real-world networks approach these models, providing further insight on their formation mechanisms and connectivity properties.


2018 ◽  
Vol 7 (11) ◽  
pp. 439 ◽  
Author(s):  
Mario Soilán ◽  
Belén Riveiro ◽  
Patricia Liñares ◽  
Andrea Pérez-Rivas

Nowadays, gathering accurate and meaningful information about the urban environment with the maximum efficiency in terms of cost and time has become more relevant for city administrations, as this information is essential if the sustainability or the resilience of the urban structure has to be improved. This work presents a methodology for the automatic parametrization and characterization of different urban typologies, for the specific case study of Santiago de Compostela (Spain), using data from Aerial Laser Scanners (ALS). This methodology consists of a number of sequential processes of point cloud data, using exclusively their geometric coordinates. Three of the main elements of the urban structure are assessed in this work: intersections, building blocks, and streets. Different geometric and contextual metrics are automatically extracted for each of the elements, defining the urban typology of the studied area. The accuracy of the measurements is validated against a manual reference, obtaining average errors of less than 3%, proving that the input data is valid for this assessment.


Author(s):  
D. L. Callahan

Modern polishing, precision machining and microindentation techniques allow the processing and mechanical characterization of ceramics at nanometric scales and within entirely plastic deformation regimes. The mechanical response of most ceramics to such highly constrained contact is not predictable from macroscopic properties and the microstructural deformation patterns have proven difficult to characterize by the application of any individual technique. In this study, TEM techniques of contrast analysis and CBED are combined with stereographic analysis to construct a three-dimensional microstructure deformation map of the surface of a perfectly plastic microindentation on macroscopically brittle aluminum nitride.The bright field image in Figure 1 shows a lg Vickers microindentation contained within a single AlN grain far from any boundaries. High densities of dislocations are evident, particularly near facet edges but are not individually resolvable. The prominent bend contours also indicate the severity of plastic deformation. Figure 2 is a selected area diffraction pattern covering the entire indentation area.


2011 ◽  
Author(s):  
Giorgio Rocco Cavanna ◽  
Ernesto Caselgrandi ◽  
Elisa Corti ◽  
Alessandro Amato del Monte ◽  
Massimo Fervari ◽  
...  

Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.


Sign in / Sign up

Export Citation Format

Share Document