Laser-Assisted and Roller-Based Nano-Imprinting Technologies and Their Applications

2007 ◽  
Author(s):  
Yung-Chun Lee ◽  
Cheng-Yu Chiu ◽  
Chun-Hung Chen ◽  
Chun-Shiang Chen
Keyword(s):  
Laser Heating ◽  
Metal Film ◽  
Laser Energy ◽  
Experimental Testing ◽  
Pulsed Laser ◽  
Experimental Tests ◽  
Thin Metal Film ◽  
Large Area ◽  
Contact Printing ◽  
Continuous Type

Nano-imprinting lithography (NIL) has been developed over 15 years and has shown its great potentials for nanopatterning and nano-fabrication. In this paper, new ideas on improving current nano-imprinting methods have been proposed and preliminary experimental tests are carried out. These proposed nano-imprinting methods are all based on the utilization of pulsed laser sources, either in UV or IR region, and can be easily implemented into a roller-based configuration, which is more effective and much faster than conventional planar type nano-imprinting methods. First of all, based on the Laser Assisted Direct Imprinting (LADI) method proposed in 2002, a modified roller-based LADI method is developed by applying a cylindrical quartz roller for mechanically loading as well as for optically focusing of a deep UV laser beam into a line. This modification not only fulfills a continuous type of LADI process but also more efficiently utilizes the laser energy so that large-area LADI is possible. Experimental testing demonstrates an imprinting rate of 3∼10 cm2/min. Secondly, a new nano-imprinting lithography based on pulsed infrared laser heating is proposed and demonstrated. It utilizes the partial transparency of silicon crystals at IR spectrum to heat up the photo-resist layer. Possible improvements and applications on this IR-NIL will be addressed. Finally, a new method of direct contact printing and patterning of a thin metal film on silicon substrate based on the idea of nano-imprinting is presented. This method combines the effects of loaded contact pressure and IR pulsed laser heating at the metal-film/substrate interface to form a stronger bonding between them, and therefore complete the direct pattern transferring of metal film on substrate. Good experimental results are observed and possible applications will be discussed.

FULL CHARACTERIZATION AT 904 nm OF LARGE AREA Sip–n JUNCTION PHOTODETECTORS PRODUCED BY LID TECHNIQUE

2005 ◽  
Vol 19 (31) ◽  
pp. 4619-4628 ◽  
Author(s):  
RAID A. ISMAIL ◽  
OMAR A. ABDULRAZAQ ◽  
ASEEL A. HADI ◽  
ODAY ATA HAMADI
Keyword(s):  
Substrate Temperature ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Large Area ◽  
Silicon Photodiode ◽  
Full Characterization ◽  
Speed Of Response ◽  
Diffusion Technique ◽  
Voltage Responsivity ◽  
Deviation Coefficient

In this paper, we report the experimental data of photoresponse, namely, voltage responsivity and speed of response at λ=904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum responsivity is obtained for p–n junctions photodetectors prepared by laser fluence of 9.17 J/cm2 for Al -doped Si and 10.03 J/cm2 for Sb -doped Si at substrate temperature (Ts) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient is improved by factors 1.6 for and 2.7 for for Al -doped Si and Sb -doped Si photodetectors, respectively, when Ts is raised from 300 K to 598 K.

An Interfacial Tracking Method for Ultrashort Pulse Laser Melting and Resolidification of a Thin Metal Film

2008 ◽  
Vol 130 (6) ◽  
Author(s):  
Yuwen Zhang ◽  
J. K. Chen
Keyword(s):  
Metal Film ◽  
Laser Energy ◽  
Film Surface ◽  
Iterative Solution ◽  
Coupling Factor ◽  
Solution Procedure ◽  
Thin Metal Film ◽  
Solidification Temperature ◽  
Ultrashort Pulse Laser ◽  
Tracking Method

An interfacial tracking method was developed to model rapid melting and resolidification of a freestanding metal film subject to an ultrashort laser pulse. The laser energy was deposited to the electrons near thin film surface, and subsequently diffused into a deeper part of the electron gas and transferred to the lattice. The energy equations for the electron and lattice were coupled through an electron-lattice coupling factor. Melting and resolidification were modeled by considering the interfacial energy balance and nucleation dynamics. An iterative solution procedure was employed to determine the elevated melting temperature and depressed solidification temperature in the ultrafast phase-change processes. The predicted surface lattice temperature, interfacial location, interfacial temperature, and interfacial velocity were compared with those obtained by an explicit enthalpy model. The effects of the electron thermal conductivity models, ballistic range, and laser fluence on the melting and resolidification were also investigated.

Development of a Carbon Nanotube-Based Nanoactuator for a Nano-Conveyer System

2008 ◽  
Author(s):  
Onejae Sul ◽  
Eui-Hyeok Yang
Keyword(s):  
Carbon Nanotube ◽  
Metal Film ◽  
Pulsed Laser ◽  
Thin Metal Film ◽  
Laser Deposition ◽  
Deposition Method ◽  
Bending Performance ◽  
Thermal Bending ◽  
Conveyer System ◽  
Scanning Electron

Multi-wall carbon nanotube (MWNT)-based bimorph nanoactuators were synthesized and characterized. A thin metal film was deposited on the sidewall of MWNTs using a pulsed laser deposition method to form a bimorph nanostructure. The preliminary actuation was demonstrated using a fabricated bimorph MWNT. Thermal bending performance of the nanoactuator on a thermal stage will be further investigated by using a scanning electron microscope.

An Interfacial Tracking Method for Ultrashort Pulse Laser Melting and Resolidification of a Thin Metal Film

2007 ◽  
Author(s):  
Yuwen Zhang ◽  
J. K. Chen
Keyword(s):  
Metal Film ◽  
Laser Energy ◽  
Film Surface ◽  
Iterative Solution ◽  
Coupling Factor ◽  
Solution Procedure ◽  
Thin Metal Film ◽  
Free Standing ◽  
Solidification Temperature ◽  
Tracking Method

An interfacial tracking method is developed to model rapid melting and resolidification of a free-standing metal film subject to an ultrashort laser pulse. The laser energy is deposited to the electrons near thin film surface, and subsequently diffused into deeper part of the electron gas and transferred to the lattice. The energy equations for the electron and lattice are coupled through an electron-lattice coupling factor. Melting and resolidification are modeled by considering the interfacial energy balance and nucleation dynamics. An iterative solution procedure is employed to determine the elevated melting temperature and depressed solidification temperature in the ultrafast phase-change process. The predicted surface lattice temperature, interfacial location, interfacial temperature, and interfacial velocity are compared with those obtained by an explicit enthalpy model. The effects of the electron thermal conductivity models, ballistic range, and laser fluence on the melting and resolidification are also investigated.

scholarly journals Rarefaction after fast laser heating of a thin metal film on a glass mount

2017 ◽  
Author(s):  
N. A. Inogamov ◽  
V. A. Khokhov ◽  
Y. V. Petrov ◽  
V. V. Zhakhovsky ◽  
K. P. Migdal ◽  
...  
Keyword(s):  
Laser Heating ◽  
Metal Film ◽  
Thin Metal Film ◽  
Thin Metal

Pulsed Laser Deposition: Future Directions

MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 54-58 ◽  
Author(s):  
T. Venkatesan ◽  
X.D. Wu ◽  
R. Muenchausen ◽  
A. Pique
Keyword(s):  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Raw Materials ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chamber Pressure ◽  
Production Environment ◽  
Large Area

Despite the discovery of the laser a few decades ago, the potential for pulsed laser deposition (PLD) of thin films has remained unexploited. Despite the sustained pioneering work at Rockwell in laser deposition, it took the development of high-temperature superconductors to fully realize the technique's potential. Early work on PLD of high-temperature superconductors demonstrated for the first time that the composition of rather complex multi-elementary materials can be reproduced in the deposited film under appropriate conditions of laser energy density and deposition angle. These features made PLD unique; and once the recipe for making in-situ crystalline films of proper stoichiometry was known, the technique's popularity was significantly enhanced in the research community.The features of laser deposition that make the process so unique, and that are discussed throughout this issue, are recapped below:1. Rather complex multi-elementary materials can be deposited well if a single-phase, homogeneous target can be fabricated. The complexity of the deposition process is translated to the relatively easier process of fabricating a high-quality target.2. The chamber pressure, target-substrate distance, target orientation with respect to the laser beam, etc. are significantly de-coupled, enabling significant freedom in deposition system design. The target is decoupled from the substrate in the sense that a small target can be used to deposit film over a fairly large area substrate with the appropriate scanning schemes.3. The efficiency of the target use is superior compared to any other technique since a predominant amount of the evaporated material is forward directed and can be collected with a high degree of efficiency. For example, in a production environment, more than 100 YBCO films (ranging 3,000-4,000 Å thick) on 1 × 1 cm2 substrates have been fabricated from a 0.25-inch-thick one-inch target with a majority of the target still left over. The cost of raw materials in a production environment may become significant, and for toxic elements particularly there is a further advantage in minimizing the spread of contaminants.

Surface and Subsurface Morphology of Laser Bean Annealed Auge/Gaaa Ohmic Contacts

1981 ◽  
Vol 4 ◽  
Author(s):  
O. Aina ◽  
J. Norton ◽  
W. Katz ◽  
G. Smith ◽  
K. Rose
Keyword(s):  
Nd:Yag Laser ◽  
Laser Heating ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Damage ◽  
Pulsed Laser Annealing ◽  
Heating Model

ABSTRACTA study of the pulsed laser annealing of AuGe films on GaAs using a Nd:YAG laser has revealed differences between the surface and subsurface morfhologies. At laser energy densities lower than 1.1 J/cm2 , the surface retained the smooth, “golden” appearance of deposited AuGe films, while evidence of damage was observed below the surface. At higher energy densities, surface damage was observed. SIMS profiles of Ga and As in the AuGe layer and a laser heating model have been used to explain the presence or absence of damage in terms of the outdiffusion of As and Ga through the laser created melt which leads to the presence or absence of Ga and As at the surface and below the surface.

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