Flexible Circuit-Based RF MEMS Switches

2001 ◽  
Author(s):  
Chunjun Wang ◽  
Ramesh Ramadoss ◽  
Simone Lee ◽  
K. C. Gupta ◽  
Victor M. Bright ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Polyimide Film ◽  
Circuit Board ◽  
Large Area ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches

Abstract This paper describes a new microelectromechanical systems (MEMS) switch fabricated using flexible circuit technologies. Hundreds of such switches can be laminated onto a large-area printed circuit board (PCB) with other RF devices and circuits. The switches are fabricated using low-cost, low-loss flexible circuit material Kapton-E polyimide film. Switches with actuation voltages as low as 73 V are reported.

RF‐MEMS switches on a printed circuit board platform

Circuit World ◽  
2010 ◽  
Vol 36 (4) ◽  
pp. 12-17
Author(s):  
Keryn Lian ◽  
Manes Eliacin ◽  
Robert Lempkowski ◽  
Marc Chason ◽  
Matthew O'Keefe ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Rf Mems ◽  
Circuit Board ◽  
Mems Switches ◽  
Printed Circuit ◽  
Rf Mems Switches

Process-Induced Thermal Effect on Packaging Yield of RF MEMS Switches

2002 ◽  
Author(s):  
Lei L. Mercado ◽  
Shun-Meen Kuo ◽  
Tien-Yu Tom Lee ◽  
Russ Lee
Keyword(s):  
Printed Circuit Board ◽  
Failure Modes ◽  
Rf Mems ◽  
Electrostatic Force ◽  
Circuit Board ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Significant Performance ◽  
And Performance ◽  
Lower Temperature

RF MEMS switches offer significant performance advantages in high frequency RF applications. The switches are actuated by electrostatic force when voltage was applied to the electrodes. Such devices provide high isolation when open and low contact resistance when closed. However, during the packaging process, there are various possible failure modes that may affect the switch yield and performance. The RF MEMS switches were first placed in a package and went through lid seal at 320°C. The assembled packages were then attached to a printed circuit board at 220°C. During the process, some switches failed due to electrical shorting. More interestingly, more failures were observed at the lower temperature of 220°C rather than 320°C. The failure mode was associated with the shorting bar and the cantilever design. Finite element simulations and simplified analytical solutions were used to understand the mechanics driving the behaviors. Simulation results have shown excellent agreement with experimental observations and measurements. Various solutions in package configurations were explored to overcome the hurdles in MEMS packaging and achieve better yield and performance.

Micro/Nanotribology of RF MEMS Switches

2004 ◽  
Author(s):  
Steven T. Patton ◽  
Kalathil C. Eapen ◽  
Jeffrey S. Zabinski
Keyword(s):  
Electric Current ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Operating Conditions ◽  
Great Promise ◽  
Rf Switches ◽  
Mems Switches ◽  
Adhesion Contact ◽  
Rf Mems Switches

Microelectromechanical systems (MEMS) radio frequency (RF) switches hold great promise in a myriad of commercial, aerospace, and military applications. MEMS switches offer important advantages over current electromechanical and solid state technologies including high linearity, low insertion loss, low power consumption, good isolation, and low cost [1–21]. However, there is little fundamental understanding of the factors determining the performance and reliability of these devices. Our previous work investigated fundamentals of hot-switched direct current (DC) gold (Au) contacts using a modified microadhesion apparatus as a switch simulator [1]. Those experiments were conducted under precisely controlled operating conditions in air at MEMS-scale forces with an emphasis on the role of surface forces and electric current on switch performance, reliability, and durability [1]. Electric current had a profound effect on deformation mechanisms, adhesion, contact resistance (R), and reliability/durability. At low current (1–10 μA), asperity creep and switching induced adhesion were the most important observations, whereas, at high current (1–10 mA), lack of adhesion and switch shorting by nanowire formation were prominent [1].

A 1.2–1.6-GHz Substrate-Integrated-Waveguide RF MEMS Tunable Filter

2011 ◽  
Vol 59 (4) ◽  
pp. 866-876 ◽  
Author(s):  
Vikram Sekar ◽  
Marcelino Armendariz ◽  
Kamran Entesari
Keyword(s):  
Insertion Loss ◽  
Tuning Range ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Tunable Filter ◽  
Circuit Board ◽  
Substrate Integrated Waveguide ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Better Than

This paper presents a high-performance substrate-integrated-waveguide RF microelectromechanical systems (MEMS) tunable filter for 1.2-1.6-GHz frequency range. The proposed filter is developed using packaged RF MEMS switches and utilizes a two-layer structure that effectively isolates the cavity filter from the RF MEMS switch circuitry. The two-pole filter implemented on RT/Duroid 6010LM exhibits an insertion loss of 2.2-4.1 dB and a return loss better than 15 dB for all tuning states. The relative bandwidth of the filter is 3.7 ± 0.5% over the tuning range. The measuredQuof the filter is 93-132 over the tuning range, which is the best reportedQin filters using off-the-shelf RF MEMS switches on conventional printed circuit board substrates. In addition, an upper stopband rejection better than 28 dB is obtained up to 4.0 GHz by employing low-pass filters at the bandpass filter terminals at the cost of 0.7-1.0-dB increase in the insertion loss.

scholarly journals Performance Comparison Of Shunt Rf Mems Switches

2021 ◽  
Vol 12 (5) ◽  
pp. 596-606
Author(s):  
S Girish Gandhi, I Govardhani, M Venkata Narayana, K Sarat Kumar
Keyword(s):  
Comparative Study ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Switching Time ◽  
Performance Comparison ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
And Performance

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

Scope of RF MEMS Technology for Microwave Circuits and Systems

2021 ◽  
pp. 1-22
Author(s):  
Kanthamani Sundharajan
Keyword(s):  
Rf Mems ◽  
Low Cost ◽  
Microwave Circuits ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Phased Array Antennas ◽  
Array Antennas ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Key Issues

Micro-electro mechanical systems (MEMS) technology has facilitated the need for innovative approaches in the design and development of miniaturized, effective, low-cost radio frequency (RF) microwave circuits and systems. This technology is expected to have significant role in today's 5G applications for the development of reconfigurable architectures. This chapter presents an overview of the evolution of MEMS-based subsystems and devices, especially switches and phased array antennas. This chapter also discusses the key issues in design and analysis of RF MEMS-based devices, particularly with primary emphasis on RF MEMS switches and antennas.

Experimental Investigation of Dynamic Response of RF-MEMS Switches

2004 ◽  
Author(s):  
O. Burak Ozdoganlar ◽  
David S. Epp ◽  
Christopher W. Dyck
Keyword(s):  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Electrical Contacts ◽  
Mode Shapes ◽  
Main Function ◽  
Capacitive Switches ◽  
Mems Switches ◽  
Damping Characteristics ◽  
Rf Mems Switches ◽  
Opening And Closing

Ohmic and capacitive switches constitute an important segment of radio frequency microelectromechanical systems (RF-MEMS) components. The main function of these switches is to provide very rapid opening and closing of electrical contacts. To fulfill this requirement, the structural dynamics and coupled-physics response of candidate switch designs must be thoroughly understood. This paper presents a set of dynamic experimentation of two RF-MEMS ohmic switches with different geometries to determine their natural frequencies, mode shapes, and damping characteristics at pressures spanning from vacuum to atmospheric. The experimental facility used for the tests is also described in detail.

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