Effect of Thickness on Microstructure, Electrical and Optical Properties of Zirconium Nitride Thin Film Prepared by DC Reactive Magnetron Sputtering at Room Temperature

2013 ◽  
Vol 770 ◽  
pp. 217-220
Author(s):  
Mano Valaiauksornlikit ◽  
Worawarong Rakreungdet ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Patthanasettakul ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Reactive Magnetron Sputtering ◽  
Zirconium Nitride ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Dc Reactive Magnetron Sputtering ◽  
Measured Resistivity

Zirconium Nitride (ZrN) thin films were prepared by dc reactive magnetron sputtering without an external substrate heating on silicon (100) wafer and glass slide. The as-deposited films obtained from different conditions and various films thickness was investigated for physical, optical and electrical properties. First, the microstructure and film morphology were examined by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM). The optical transparency was measured by UV-vis spectrophotometer. Finally, the electrical properties, based on measured resistivity, were studied by four-point probe. The result showed that the ZrN films were all well orientated in the (111) plane. When the film thickness was increased, the grain size was also increased. The effect of the film thickness was observed in the charge in colors and optical transmission of the films.

Characterization of Titanium Nitride Films Prepared by DC Reactive Magnetron Sputtering at Different Deposition Time

2007 ◽  
Author(s):  
Kai Yang ◽  
Jianqing Jiang ◽  
Mingyuan Gu
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Titanium Nitride ◽  
Deposition Time ◽  
Adhesive Property ◽  
Preferred Orientation ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tin Films ◽  
Dc Reactive Magnetron Sputtering

Titanium nitride (TiN) films were grown on Si (111) and 95W18Cr4V high-speed steel substrates using DC reactive magnetron sputtering technique with different deposition time. The changes in crystal growth orientation of the TiN films were measured by X-ray diffraction (XRD). The surface & cross-sectional morphologies of TiN films were analyzed using field emission scanning electron microscopy (FESEM). The hardness and adhesive property of TiN films were evaluated as well. It is found that the increase of the film thickness favors the formation of the {111} preferred orientation of TiN films. When the {111} preferred orientation is presented, TiN films exhibit a kind of surface morphology of triangular pyramid with right angles. With the increase of the film thickness, the columnar grains continuously grow lengthwise and breadthwise. The size of grains influences the hardness of TiN films more greatly. The adhesive property of the film/substrate interface decreased with increasing film thickness.

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF Al/TaNx MULTILAYERS

2010 ◽  
Vol 03 (02) ◽  
pp. 131-133 ◽  
Author(s):  
HONGCHUAN JIANG ◽  
CHAOJIE WANG ◽  
WANLI ZHANG ◽  
XU SI
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Temperature Coefficient ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Temperature Coefficient Of Resistance ◽  
Dc Reactive Magnetron Sputtering

Al/TaN x multilayers were deposited on Al 2 O 3 wafers by DC reactive magnetron sputtering. Microstructure and electrical properties of the samples were investigated in detail. The results show that more compact and smoother surfaces than that of TaN x thin films can be obtained in the Al/TaN x multilayers. Metal Al phases precipitate out from all the Al/TaN x multilayer samples. The main phases in the Al/TaN x multilayers are poor nitrogen phases when sputtered at lower nitrogen partial flux. However, rich nitrogen phases gradually precipitate out from the samples at higher nitrogen partial flux. With the increase of the nitrogen partial flux from 2 to 6%, the resistivity of the Al/TaN x multilayers increases from 640 to 1170 μΩ · cm, and the temperature coefficient of resistance (TCR) of the samples increases from 46 to 350 ppm/°C. Compared with TaN x thin films, the resistivity and TCR of the Al/TaN x multilayers are all higher than those of the TaN x thin films.

X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Oxide Films ◽  
Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

STUDY ON MICROSTRUCTURE AND PROPERTY OF Pt-DOPED WO3 FILMS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3489-3492
Author(s):  
YINFENG WANG ◽  
ANPING LIU ◽  
XUEHENG YANG ◽  
XIAOPING SU
Keyword(s):  
Magnetron Sputtering ◽  
Change Process ◽  
Sol Gel ◽  
Composite Films ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Film ◽  
Dc Reactive Magnetron Sputtering

We have prepared Pt -doped WO 3 composite films by sol-gel compounding and DC reactive magnetron sputtering respectively. Spectra change process according to the absorbing hydrogen time has been characterized by UV-VIS, X-ray diffraction spectra of two kinds of samples have been studied in this paper, and the crystallization temperature of film has been observed at the same time. As a result, both two WO 3 composite films are better sensitive to hydrogen by Pt -doping and the Pt sputtered sol-gel film has faster response to hydrogen than the Pt sputtered film by DC reactive magnetron sputtering, but the changes of luminousness are almost equal for two films.

Structure and Oxidation Behavior CrN Thin Films Deposited Using DC Reactive Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 122-127
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxidation Behavior ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Thin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Wafer Substrate

The CrN ceramic thin films were deposited using DC reactive magnetron sputtering system on silicon wafer substrate. Oxidation behavior was carried out in air at evaluated temperatures ranging from 500 °C up to 900 °C for 2 h. The structure and element composition of the films at different thermal annealing temperatures ranging were investigated by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS), respectively. The oxidation activation energies of the films were calculated using Arrhenius equation. The changes in the crystal structure from CrN to Cr2O3 phase were investigated from XRD results. The accumulation of grains on surface was confirmed by FESEM micrographs. The cross-section analysis showed an apparent columnar feature with dense structure for the film annealed at low temperature, and becomes porous when increasing the annealing temperature. The thickness was increased from 1.43 to 2.67 μm. The EDS studies indicated the existence of Cr, N and O with different elements compositions on the deposited thin films. The oxidation activation energy for the CrN thin films is 124.4 kJ/mol.

Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering

2011 ◽  
Vol 335-336 ◽  
pp. 964-967
Author(s):  
Hua Fu Zhang ◽  
Xin Feng Wang
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Dc Reactive Magnetron Sputtering ◽  
Probe Measurements

Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O2ambience with different Ar/O2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV–vis spectrophotometers. When Ar/O2ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O2ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O2ratio of 25:1 have the minimum resistivity of 1.4×10-3Ω•cm and a high transmittance of above 92%.

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