Prediction of Electromigration Failure in Passivated Polycrystalline Line Considering Passivation Thickness

Author(s):  
Kazuhiko Sasagawa ◽  
Masataka Hasegawa ◽  
Naoki Yoshida ◽  
Masumi Saka ◽  
Hiroyuki Abe´

It is known that the lifetime of the passivated metal line varies depending on kind and thickness of the passivation layer. The appropriate consideration of the effect of passivation on electromigration damage makes it possible to evaluate the reliability of the metal line with choosing kind or thickness of the passivation. This paper is focused on the effect of passivation thickness on the failure prediction. The failure prediction considering the passivation thickness is shown. First, the film characteristic constants depending on the passivation thickness are experimentally determined in the lines with three kinds of passivation thickness. Next, by extrapolating the obtained dependencies, the characteristic constants are determined to predict the lifetime of the line covered with the thicker passivation than that employed in the experiment, and the lifetime is predicted by the reliability evaluation method based on the numerical simulation.

Author(s):  
Kazuhiko Sasagawa ◽  
Shigeo Uno ◽  
Nao Yamaji ◽  
Masumi Saka

It is known that there is the threshold current density of the electromigration damage in the via-connected line. The evaluation of the threshold current density is one of the great interests from the viewpoint of IC reliability. In this study, a metal line with two-dimensional shape, i.e. an angled metal line is treated. The evaluation method of the threshold current density is applied to the metal line. The method is based on the numerical simulation of the building-up process of the atomic density distribution in the bamboo line by using the governing parameter for electromigration damage. Comparing the evaluated results with that of straight-shaped line, the effect of line-shape on threshold current density of electromigration damage is discussed. Furthermore, the obtained difference in the threshold current density is verified experimentally.


Author(s):  
Yasunobu Iwai ◽  
Koichi Shinozaki ◽  
Daiki Tanaka

Abstract Compared with space parts, consumer parts are highly functional, low cost, compact and lightweight. Therefore, their increased usage in space applications is expected. Prior testing and evaluation on space applicability are necessary because consumer parts do not have quality guarantees for space application [1]. However, in the conventional reliability evaluation method, the test takes a long time, and the problem is that the robustness of the target sample can’t be evaluated in a short time. In this report, we apply to the latest TSOP PEM (Thin Small Outline Package Plastic Encapsulated Microcircuit) an evaluation method that combines preconditioning and HALT (Highly Accelerated Limit Test), which is a test method that causes failures in a short time under very severe environmental conditions. We show that this method can evaluate the robustness of TSOP PEMs including solder connections in a short time. In addition, the validity of this evaluation method for TSOP PEM is shown by comparing with the evaluation results of thermal shock test and life test, which are conventional reliability evaluation methods.


2014 ◽  
Vol 672-674 ◽  
pp. 1441-1446 ◽  
Author(s):  
Yu Qiang Ou ◽  
Le Feng Cheng ◽  
Jian Zhong Wen ◽  
Xuan Yu Qiu ◽  
Tao Yu

Research on reliability of distribution network has very important meaning and function to ensure the quality of power supply. This paper introduces some basic concepts of reliability in distribution network, including distribution network reliability definition, task and index. The classical reliability evaluation method was reviewed, and focused on specific distribution network, an example analysis was given, and specific reliability evaluation indexes were calculated. Finally, the future development of distribution network reliability evaluation was made a simple prospect.


Energies ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 895 ◽  
Author(s):  
Haipeng Xie ◽  
Zhaohong Bie ◽  
Yanling Lin ◽  
Chao Zheng

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