Growth Mechanism and Some Physical Properties of Silicon Nitride Thin Films Prepared by Reactive Sputtering in Nitrogen

1969 ◽  
Vol 6 (4) ◽  
pp. 605-605
Author(s):  
J. Cervenǎk ◽  
L. N. Aleksandrov ◽  
R. N. Lovjagin ◽  
E. A. Krivorotov
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Physical Properties ◽  
Growth Mechanism ◽  
Reactive Sputtering

Some Physical Properties of Si–Si3N4 Interfaces and Silicon Nitride Thin Films Prepared by Reactive Sputtering in Nitrogen

1969 ◽  
Vol 6 (6) ◽  
pp. 938-940 ◽  
Author(s):  
J. C̆ervenák ◽  
L. N. Aleksandrov ◽  
R. N. Lovjagin ◽  
E. A. Krivorotov
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Physical Properties ◽  
Reactive Sputtering

Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

2005 ◽  
Vol 98 (4) ◽  
pp. 044904 ◽  
Author(s):  
B. A. Walmsley ◽  
Y. Liu ◽  
X. Z. Hu ◽  
M. B. Bush ◽  
K. J. Winchester ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Physical Properties ◽  
Deposition Temperature ◽  
Mechanical And Physical Properties

Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures

2014 ◽  
Vol 53 (5S2) ◽  
pp. 05GE01 ◽  
Author(s):  
Mayumi B. Takeyama ◽  
Masaru Sato ◽  
Yoshihiro Nakata ◽  
Yasushi Kobayashi ◽  
Tomoji Nakamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Low Temperatures ◽  
Reactive Sputtering ◽  
Plasma Enhanced Cvd

scholarly journals Role of substrate temperature on the growth mechanism and physical properties of spray deposited lead oxide thin films

2014 ◽  
Vol 32 (3) ◽  
pp. 448-456 ◽  
Author(s):  
M. Suganya ◽  
A. Balu ◽  
K. Usharani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Physical Properties ◽  
Growth Mechanism ◽  
Lead Oxide ◽  
Spray Pyrolysis Technique ◽  
Orthorhombic Phase ◽  
Cost Effective ◽  
Glass Substrates ◽  
Substrate Temperatures

AbstractThin films of lead oxide were synthesized by cost effective spray pyrolysis technique at different substrate temperatures on glass substrates. Effect of substrate temperature on the growth mechanism and physical properties of the films was investigated. All the films were polycrystalline in nature with tetragonal structure corresponding to α-PbO. The films coated at 225 °C and 275 °C were (1 0 1) oriented, while the films deposited at 325 °C and 375 °C were (0 0 2) oriented. Above 375 °C, the pure tetragonal nature deteriorated and the peaks corresponding to orthorhombic phase were observed. The band gap value was found to be in the range of 2.3 to 2.62 eV. All the films had a resistivity of the order of 103 ohm-cm. A minimum resistivity of 0.0191 × 103 ohm-cm was obtained for the film coated at 325 °C. The activation energy increased with increase in substrate temperature.

scholarly journals Study on radio frequency reactive sputtering deposition of silicon nitride thin films

1992 ◽  
Vol 10 (3) ◽  
pp. 462-467 ◽  
Author(s):  
F. C. Stedile ◽  
I. J. R. Baumvol ◽  
W. H. Schreiner ◽  
F. L. Freire
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Sputtering Deposition

Wafer-scale, three-dimensional helical porous thin films deposited at a glancing angle

Nanoscale ◽  
2014 ◽  
Vol 6 (16) ◽  
pp. 9401-9409 ◽  
Author(s):  
Zhifeng Huang ◽  
Fan Bai
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Green Energy ◽  
Wafer Scale ◽  
Porous Thin Films ◽  
Glancing Angle

Helical porous thin films obliquely deposited are reviewed in terms of fabrication, growth mechanism, physical properties and applications in green energy.

Process condition dependence of mechanical and physical properties of silicon nitride thin films

2007 ◽  
Vol 102 (10) ◽  
pp. 103517 ◽  
Author(s):  
B. A. Walmsley ◽  
A. J. Keating ◽  
Y. Liu ◽  
X. Z. Hu ◽  
M. B. Bush ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Physical Properties ◽  
Process Condition ◽  
Condition Dependence ◽  
Mechanical And Physical Properties

Preparation of CdS Thin Films by Reactive Sputtering Method

Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Cds Thin Films
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