Wafer-scale, three-dimensional helical porous thin films deposited at a glancing angle

Nanoscale ◽  
2014 ◽  
Vol 6 (16) ◽  
pp. 9401-9409 ◽  
Author(s):  
Zhifeng Huang ◽  
Fan Bai
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Green Energy ◽  
Wafer Scale ◽  
Porous Thin Films ◽  
Glancing Angle

Helical porous thin films obliquely deposited are reviewed in terms of fabrication, growth mechanism, physical properties and applications in green energy.

Simulation of 3D Films Deposited by Glancing Angle Deposition Using 3D-Films

2000 ◽  
Vol 616 ◽  
Author(s):  
T. Smy ◽  
D. Vick ◽  
M. J. Brett ◽  
S. K. Dew ◽  
A. T. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Three Dimensional ◽  
Thin Film Deposition ◽  
Glancing Angle Deposition ◽  
Film Deposition ◽  
Porous Thin Films ◽  
Glancing Angle ◽  
Memory Resources ◽  
Angle Deposition

AbstractA new fully three dimensional (3D) ballistic deposition simulator 3D-FILMS has been developed for the modeling of thin film deposition and structure. The simulator may be implemented using the memory resources available to workstations. In order to illustrate the capabilities of 3D-FILMS, we apply it to the growth of engineered porous thin films produced by the technique of GLancing Angle Deposition (GLAD).

Nanoindentation of Microspring Thin Films

2000 ◽  
Vol 657 ◽  
Author(s):  
Mary W. Seto ◽  
Brian Dick ◽  
Michael J. Brett
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Glancing Angle Deposition ◽  
Nanometer Scale ◽  
Deposition Technique ◽  
Porous Thin Films ◽  
Glancing Angle ◽  
Scale Control ◽  
Angle Deposition ◽  
Insight Into

ABSTRACTPorous thin films with helical microstructures were fabricated with the Glancing Angle Deposition technique. These films consisted of arrays of “microsprings” whose geometries could be engineered with nanometer scale control. Some of the mechanical properties of these helically structured films were studied with a nanoindentation technique. Several microscopic “springbed” films were tested over a range of forces using a spherical indenter tip. The geometries of the microsprings were varied, and a number of different materials were used to fabricate these films, which were typically a few micrometers thick. Slanted post arrays, resembling micro-cantilevers, were also subjected to nanoindentation tests. Results of initial experiments, theory, and simulations show that these microstructures behave in a manner analogous to macroscopic springs and cantilevers, and may offer some insight into how materials behave at the microscale.

AFM Observations on the Growth Mechanisms of Epitaxial Perovskite Oxide SrRuO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
R. A. Rao ◽  
Q. Gan ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Plane Domain ◽  
Perovskite Oxide ◽  
X Ray Diffraction ◽  
Island Growth ◽  
Step Flow ◽  
Atomic Force ◽  
Step Flow Growth

ABSTRACTThe growth mechanism and surface morphology of epitaxial SrRuO3 thin films deposited on exact and vicinal (001) SrTiO3 and exact (001) LaAlO3 substrates has been studied. Vicinal substrates with miscut angle, a, up to 4° toward [010] direction were used. Atomic force microscope images show that the films grown on exact (001) SrTiO3 substrate had a growth mechanism involving two dimensional nucleation. In contrast, characteristic step patterns were observed on the films deposited on vicinal substrates, suggesting that these films had a step flow growth mode. The films deposited on exact (001) LaAlO3 substrates had a three dimensional island growth, due to the incoherence between the film and substrate lattice. These results were found to be consistent with the results of x-ray diffraction analysis of the in-plane domain structure.

scholarly journals Role of substrate temperature on the growth mechanism and physical properties of spray deposited lead oxide thin films

2014 ◽  
Vol 32 (3) ◽  
pp. 448-456 ◽  
Author(s):  
M. Suganya ◽  
A. Balu ◽  
K. Usharani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Physical Properties ◽  
Growth Mechanism ◽  
Lead Oxide ◽  
Spray Pyrolysis Technique ◽  
Orthorhombic Phase ◽  
Cost Effective ◽  
Glass Substrates ◽  
Substrate Temperatures

AbstractThin films of lead oxide were synthesized by cost effective spray pyrolysis technique at different substrate temperatures on glass substrates. Effect of substrate temperature on the growth mechanism and physical properties of the films was investigated. All the films were polycrystalline in nature with tetragonal structure corresponding to α-PbO. The films coated at 225 °C and 275 °C were (1 0 1) oriented, while the films deposited at 325 °C and 375 °C were (0 0 2) oriented. Above 375 °C, the pure tetragonal nature deteriorated and the peaks corresponding to orthorhombic phase were observed. The band gap value was found to be in the range of 2.3 to 2.62 eV. All the films had a resistivity of the order of 103 ohm-cm. A minimum resistivity of 0.0191 × 103 ohm-cm was obtained for the film coated at 325 °C. The activation energy increased with increase in substrate temperature.

Temperature Effect on the Quality of Ain Thin Films

1998 ◽  
Vol 537 ◽  
Author(s):  
Margarita P. Thompson ◽  
Andrew R. Drews ◽  
Changhe Huang ◽  
Gregory W. Auner
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Plasma Source ◽  
High Energy ◽  
Mis Structure ◽  
X Ray Diffraction ◽  
Diffuse Intensity ◽  
Force Microscopy ◽  
Atomic Force

AbstractAIN thin films were deposited at various substrate temperatures via Plasma Source Molecular Beam Epitaxy. The films were grown on 6H-SiC (0001) substrates. Reflection High Energy Electron Diffraction and Atomic Force Microscopy showed a dramatic change in the surface morphology of the film grown at 640°C. This is attributed to a change in the growth mechanism from pseudomorphic at lower temperatures to three-dimensional at higher than 640°C temperatures. Photoreflectance measurements showed an absorption shift toward 200 nm as the deposition temperature increases which is attributed to the change in the growth mechanism at higher temperatures. X-Ray Diffraction was unable to conclusively determine the AIN (0002) peak due to a significant diffuse intensity from the SiC (0002) peak. A MIS structure was created by depositing Pt contacts on the film grown at 500°C. I-V measurements showed that the Pt/AIN contact is Schottky.

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