The Electronic Structure of Solid Surfaces: Core Level Excitation Techniques

1973 ◽  
Vol 10 (1) ◽  
pp. 176-182 ◽  
Author(s):  
Robert L. Park ◽  
J. E. Houston

2015 ◽  
Vol 92 (8) ◽  
Author(s):  
Jindřich Kolorenč ◽  
Alexander B. Shick ◽  
Alexander I. Lichtenstein


2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.



2003 ◽  
Vol 68 (16) ◽  
Author(s):  
Cormac McGuinness ◽  
Cristian B. Stagarescu ◽  
Philip J. Ryan ◽  
James E. Downes ◽  
Dongfeng Fu ◽  
...  




1996 ◽  
Vol 8 (14) ◽  
pp. 2389-2400 ◽  
Author(s):  
A E Bocquet ◽  
K Mamiya ◽  
T Mizokawa ◽  
A Fujimori ◽  
T Miyadai ◽  
...  


1988 ◽  
Vol 131 ◽  
Author(s):  
T. Motooka ◽  
P. Fons ◽  
J. E. Greene

ABSTRACTThe electronic structure of dimerized trimethylaluminum (TMA), Al2(CH3)6. adsorbed on Si(100) surfaces has been investigated using molecular orbital (MO) calculations based on a cluster description of TMA/Si(100). The calculated results suggest that the interactions between TMA and the Si(100) surface are described by overlap of the TMA electron-deficient bond and Si surface dangling-bond orbitals. The electron-deficient bond orbital is the highest occupied MO of TMA and acts as an electron acceptor for charge transfer from a surface Si atom to TMA consistent with observed core-level and valence photoelectron spectra.



1976 ◽  
Vol 48 (3) ◽  
pp. 479-496 ◽  
Author(s):  
Joel A. Appelbaum ◽  
D. R. Hamann


2008 ◽  
Vol 129 (10) ◽  
pp. 105104 ◽  
Author(s):  
Avisek Chatterjee ◽  
Liyan Zhao ◽  
Lei Zhang ◽  
Debabrata Pradhan ◽  
Xiaojing Zhou ◽  
...  


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