Electrical characteristics of polycrystalline silicon thin film transistors using the Cu-field aided lateral crystallization process

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491552 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1427 ◽

Author(s):

Se-Youl Kwon ◽

Kyoung-Wan Park ◽

Jae-Bok Lee ◽

Duck-Kyun Choi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Crystallization Process ◽

Electrical Characteristics ◽

Silicon Thin Film ◽

Lateral Crystallization

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The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization

IEEE Electron Device Letters ◽

10.1109/55.847376 ◽

2000 ◽

Vol 21 (7) ◽

pp. 347-349 ◽

Author(s):

Tae-Kyung Kim ◽

Gi-Bum Kim ◽

Byung-Il Lee ◽

Seung-Ki Joo

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

Electrical Stress ◽

Lateral Crystallization

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Effect of Dopant Concentration in Lightly Doped Drain Region on the Electrical Properties of N-Type Metal Induced Lateral Crystallization Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.10mc13 ◽

2013 ◽

Vol 52 (10S) ◽

pp. 10MC13 ◽

Author(s):

Se Wan Son ◽

Chang Woo Byun ◽

Yong Woo Lee ◽

Seung Jae Yun ◽

Ashkan Vakilipour Takaloo ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Dopant Concentration ◽

Silicon Thin Film ◽

Drain Region ◽

Lateral Crystallization ◽

Lightly Doped Drain

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Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Applied Physics Letters ◽

10.1063/1.3105983 ◽

2009 ◽

Vol 94 (12) ◽

pp. 122105 ◽

Author(s):

Jang-Sik Lee ◽

Min-Sun Kim ◽

Dongjo Kim ◽

Yong-Mu Kim ◽

Jooho Moon ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

Ink Jet ◽

Fabrication And Characterization ◽

Lateral Crystallization

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High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l311 ◽

2002 ◽

Vol 41 (Part 2, No. 3B) ◽

pp. L311-L313 ◽

Author(s):

Akito Hara ◽

Fumiyo Takeuchi ◽

Michiko Takei ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Alkali Glass ◽

Lateral Crystallization

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(Invited) Self-Aligned Four-Terminal Low-Temperature Polycrystalline-Silicon Thin-Film Transistors on Glass Substrate Using Continuous-Wave Laser Lateral Crystallization

ECS Transactions ◽

10.1149/07510.0037ecst ◽

2016 ◽

Vol 75 (10) ◽

pp. 37-47 ◽

Author(s):

A. Hara ◽

H. Ohsawa

Keyword(s):

Thin Film ◽

Low Temperature ◽

Glass Substrate ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Lateral Crystallization

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Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bj03 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BJ03 ◽

Author(s):

Shuntaro Fujii ◽

Shin-Ichiro Kuroki ◽

Yuya Kawasaki ◽

Koji Kotani

Keyword(s):

Thin Film ◽

Electron Transport ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Electron Transport Properties ◽

Lateral Crystallization

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Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions

Solid-State Electronics ◽

10.1016/s0038-1101(97)00130-5 ◽

1997 ◽

Vol 41 (9) ◽

pp. 1363-1369 ◽

Author(s):

M. Valdinoci ◽

L. Colalongo ◽

G. Baccarani ◽

A. Pecora ◽

I. Policicchio ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Electrical Characteristics ◽

Silicon Thin Film ◽

Dynamic Conditions

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Electrical Characteristics of a Reduced-Gate Structure Polycrystalline Silicon Thin Film Transistor Using Field-Aided Lateral Crystallization

ECS Transactions ◽

10.1149/1.3481234 ◽

2019 ◽

Vol 33 (5) ◽

pp. 173-181 ◽

Author(s):

Jung Sun You ◽

Kwang Jin Lee ◽

Duck-Kyun Choi ◽

Young-Bae Kim

Keyword(s):

Thin Film ◽

Polycrystalline Silicon ◽

Thin Film Transistor ◽

Electrical Characteristics ◽

Silicon Thin Film ◽

Gate Structure ◽

Lateral Crystallization

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High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1269 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1269-1276 ◽

Author(s):

Akito Hara ◽

Michiko Takei ◽

Fumiyo Takeuchi ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Diode Pumped ◽

Lateral Crystallization

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Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors

Applied Physics Letters ◽

10.1063/1.4812669 ◽

2013 ◽

Vol 103 (5) ◽

pp. 053515 ◽

Author(s):

Chia-Hsin Chou ◽

I-Che Lee ◽

Po-Yu Yang ◽

Ming-Jhe Hu ◽

Chao-Lung Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Crystallization Mechanism ◽

Electrical Characteristics ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

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