Reflection high-energy electron diffraction pattern of GaN grown on 6H–SiC by metalorganic molecular beam epitaxy using AlGaN template

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1585076 ◽

2003 ◽

Vol 21 (4) ◽

pp. 1822 ◽

Author(s):

Tohru Honda ◽

Hideo Kawanishi

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Pattern ◽

Electron Diffraction Pattern ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Metalorganic Molecular Beam Epitaxy

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Transitions in the reflection high-energy electron-diffraction pattern as a substrate temperature probe in molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583644 ◽

1987 ◽

Vol 5 (6) ◽

pp. 1654 ◽

Author(s):

L. P. Ramberg

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Substrate Temperature ◽

Diffraction Pattern ◽

Electron Diffraction Pattern ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Temperature Probe

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Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation

Journal of Applied Physics ◽

10.1063/1.1606515 ◽

2003 ◽

Vol 94 (8) ◽

pp. 4871 ◽

Author(s):

Sasikala Ganapathy ◽

Makoto Kurimoto ◽

Periyasamy Thilakan ◽

Kasturi Uesugi ◽

Ikuo Suemune ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Carbon Incorporation ◽

Metalorganic Molecular Beam Epitaxy ◽

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A study of metalorganic molecular beam epitaxy growth of InAs by mass spectrometry and reflection high-energy electron diffraction

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90369-v ◽

1990 ◽

Vol 105 (1-4) ◽

pp. 240-243 ◽

Author(s):

B.W. Liang ◽

T.P. Chin ◽

L.Y. Wang ◽

C.W. Tu

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Metalorganic Molecular Beam Epitaxy

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A study of Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs by reflection high-energy electron diffraction

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90457-t ◽

1992 ◽

Vol 124 (1-4) ◽

pp. 181-185 ◽

Author(s):

H.K. Dong ◽

B.W. Liang ◽

M.C. Ho ◽

S. Hung ◽

C.W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Metalorganic Molecular Beam Epitaxy ◽

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In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffraction

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90241-c ◽

1990 ◽

Vol 100 (3) ◽

pp. 433-438 ◽

Author(s):

Toshiro Isu ◽

Akiyoshi Watanabe ◽

Masayuki Hata ◽

Yoshifumi Katayama

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Microscopic Observation ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Metalorganic Molecular Beam Epitaxy

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Reflection high‐energy electron‐diffraction study of metalorganic molecular‐beam epitaxy of GaAs using trimethylgallium and arsenic

Journal of Applied Physics ◽

10.1063/1.344914 ◽

1990 ◽

Vol 67 (9) ◽

pp. 4393-4395 ◽

Author(s):

B. W. Liang ◽

T. P. Chin ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Metalorganic Molecular Beam Epitaxy

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Combined Rayleigh and Raman scattering study of AlxGa1−xAs grown via molecular beam epitaxy under reflection high‐energy electron diffraction determined growth conditions

Applied Physics Letters ◽

10.1063/1.99311 ◽

1988 ◽

Vol 52 (1) ◽

pp. 42-44 ◽

Author(s):

W. C. Tang ◽

P. D. Lao ◽

A. Madhukar ◽

N. M. Cho

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Raman Scattering ◽

Molecular Beam ◽

Growth Conditions ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Scattering Study

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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Simultaneous monitoring of different surface processes on different streaks of the reflection high energy electron diffraction pattern

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80181-b ◽

1995 ◽

Vol 150 ◽

pp. 62-67 ◽

Author(s):

W. Braun ◽

K. Ploog

Keyword(s):

Electron Diffraction ◽

Diffraction Pattern ◽

Electron Diffraction Pattern ◽

High Energy ◽

Energy Electron ◽

Surface Processes ◽

High Energy Electron

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Growth kinetics and step density in reflection high‐energy electron diffraction during molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.341041 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2272-2283 ◽

Author(s):

Shaun Clarke ◽

Dimitri D. Vvedensky

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Growth Kinetics ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

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