Combined Rayleigh and Raman scattering study of AlxGa1−xAs grown via molecular beam epitaxy under reflection high‐energy electron diffraction determined growth conditions

1988 ◽  
Vol 52 (1) ◽  
pp. 42-44 ◽  
Author(s):  
W. C. Tang ◽  
P. D. Lao ◽  
A. Madhukar ◽  
N. M. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Scattering Study

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

Reflection High Energy Electron Diffraction and Atomic Force Microscopy Studies of MnxSc(1-x) Alloys Grown on MgO(001) Substrates by Molecular Beam Epitaxy

2011 ◽  
Vol 1295 ◽  
Author(s):  
Costel Constantin ◽  
Abhijit Chinchore ◽  
Arthur R. Smith
Keyword(s):  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Method

ABSTRACTThe combination of the molecular beam epitaxy growth method with the in-situ reflection high energy electron diffraction measurements currently offers unprecedented control of crystalline growth materials. We present here a stoichiometric study of MnxSc(1-x) [x = 0, 0.03, 0.05, 0.15, 0.25, 0.35, and 0.50] thin films grown on MgO(001) substrates with this growth method. Reflection high energy electron diffraction and atomic force microscopy measurements reveal alloy behavior for all of our samples. In addition, we found that samples Mn0.10Sc0.90 and Mn0.50Sc0.50 display surface self-assembled nanowires with a length/width ratio of ~ 800 – 2000.

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