Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
2003 ◽
Vol 21
(4)
◽
pp. 1048-1054
◽
2011 ◽
Vol 257
(23)
◽
pp. 9717-9723
◽
Keyword(s):
2012 ◽
Vol 22
(4)
◽
pp. 190-193
◽
1997 ◽
Vol 36
(Part 1, No. 5A)
◽
pp. 2817-2821
◽
2007 ◽
Vol 16
(2)
◽
pp. 196-201
◽
2003 ◽
Vol 42
(Part 2, No. 3B)
◽
pp. L273-L276
◽
2000 ◽
Vol 18
(1)
◽
pp. 278-284
◽
1989 ◽
Vol 7
(3)
◽
pp. 2325-2327
◽