Silicon carbide formation by methane plasma immersion ion implantation into silicon

Author(s):  
Zhenghua An ◽  
Ricky K. Y. Fu ◽  
Peng Chen ◽  
Weili Liu ◽  
Paul K. Chu ◽  
...  
2004 ◽  
Vol 447-448 ◽  
pp. 153-157 ◽  
Author(s):  
Zhenghua An ◽  
Ricky K.Y. Fu ◽  
Peng Chen ◽  
Weili Liu ◽  
Paul K. Chu ◽  
...  

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8366-8369 ◽  
Author(s):  
W. Ensinger ◽  
G. Kraft ◽  
F. Sittner ◽  
K. Volz ◽  
K. Baba ◽  
...  

2000 ◽  
Vol 609 ◽  
Author(s):  
K. Volz ◽  
Ch. Klatt ◽  
W. Ensinger

ABSTRACTHydrocarbon ions are implanted into silicon by pulse biasing Si to a high voltage of -45 kV in a methane plasma. The resulting SiCx:H films are examined with respect to their composition and chemical binding by RBS, NRA and IR spectroscopy. The process may yield all C/Si ratios, up to pure C films. The H depth profile is shown to be strongly governed by the C depth profile. Silicon carbide bonding as well as C–H bonds can be proven in the implanted region.


2007 ◽  
Vol 201 (15) ◽  
pp. 6615-6618 ◽  
Author(s):  
Tao Sun ◽  
Langping Wang ◽  
Yonghao Yu ◽  
Yuhang Wang ◽  
Xiaofeng Wang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document