Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

2003 ◽  
Vol 21 (5) ◽  
pp. 2018 ◽  
Author(s):  
W. Henschel ◽  
Y. M. Georgiev ◽  
H. Kurz
Keyword(s):  
Electron Beam ◽  
High Contrast ◽  
Hydrogen Silsesquioxane ◽  
Negative Tone

Nanostructuring Techniques for 3C-SiC(100) NEMS Structures

2010 ◽  
Vol 645-648 ◽  
pp. 841-844 ◽  
Author(s):  
Manuel Hofer ◽  
Thomas Stauden ◽  
Ivo W. Rangelow ◽  
Jörg Pezoldt
Keyword(s):  
Electron Beam ◽  
Crystallographic Orientation ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Dry Etching ◽  
Hydrogen Silsesquioxane ◽  
Free Standing ◽  
Feature Size ◽  
Etching Mask ◽  
Negative Tone

In this work nanostructures based on a 30 nm thick 3C-SiC (100) heteroepitaxially grown on Si(100) are demonstrated. They consist of free standing nanoresonators with dimensions below 50 nm. The free standing nanostructures and resonators were defined by electron beam lithography using hydrogen silsesquioxane (HSQ) as a negative tone e-beam resist acting as a selective etching mask during the anisotropic and isotropic dry etching. The influences of the proximity effect, the crystallographic orientation, the angle of exposing on the feature size are highlighted.

Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist

Vacuum ◽  
2005 ◽  
Vol 77 (2) ◽  
pp. 117-123 ◽  
Author(s):  
Y.M. Georgiev ◽  
W. Henschel ◽  
A. Fuchs ◽  
H. Kurz
Keyword(s):  
Surface Roughness ◽  
Electron Beam ◽  
Hydrogen Silsesquioxane ◽  
Negative Tone

Performance and applications of the holography electron microscope

1993 ◽  
Vol 51 ◽  
pp. 1078-1079
Author(s):  
Akira Tonomura
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Phase Measurement ◽  
Electron Holography ◽  
Imaging Method ◽  
High Contrast ◽  
Magnetic Lens ◽  
High Brightness ◽  
Holographic Imaging ◽  
Dynamic Observation

Electron holography is a two-step imaging method. However, the ultimate performance of holographic imaging is mainly determined by the brightness of the electron beam used in the hologram-formation process. In our 350kV holography electron microscope (see Fig. 1), the decrease in the inherently high brightness of field-emitted electrons is minimized by superposing a magnetic lens in the gun, for a resulting value of 2 × 109 A/cm2 sr. This high brightness has lead to the following distinguished features. The minimum spacing (d) of carrier fringes is d = 0.09 Å, thus allowing a reconstructed image with a resolution, at least in principle, as high as 3d=0.3 Å. The precision in phase measurement can be as high as 2π/100, since the position of fringes can be known precisely from a high-contrast hologram formed under highly collimated illumination. Dynamic observation becomes possible because the current density is high.

Systematic Studies of Fullerene Derivative Electron Beam Resists

1999 ◽  
Vol 584 ◽  
Author(s):  
A. P. G. Robinson ◽  
R. E. Palmer ◽  
T. Tada ◽  
T. Kanayama ◽  
E. J. Shelley ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dissolution Rate ◽  
Organic Solvents ◽  
Spin Coating ◽  
Electron Beam Irradiation ◽  
Fullerene Derivative ◽  
Silicon Substrates ◽  
Beam Irradiation ◽  
Negative Tone ◽  
20 Nm

AbstractWe report systematic studies of the response of C60 derivatives to electron beam irradiation. Films of fourteen different mono, tris and tetra adduct methanofullerene C60 derivatives were produced by spin coating on hydrogen terminated silicon substrates. Exposure of the films to a 20 keV electron beam substantially altered the dissolution rate of the derivative films in organic solvents such as monochlorobenzene. All of the derivatives exhibited negative tone resist behaviour with sensitivities between ∼ 8.5 × 10-4 and ∼ 4 × 10-3 C/cm2 107, much higher than that of C60. Features with widths of ∼ 20 nm were produced using these compounds, and the etch ratios of the compounds were found to be more than twice those of a standard novolac based resist (SAL601).

Sign in / Sign up

Export Citation Format

Share Document