Systematic Studies of Fullerene Derivative Electron Beam Resists

1999 ◽  
Vol 584 ◽  
Author(s):  
A. P. G. Robinson ◽  
R. E. Palmer ◽  
T. Tada ◽  
T. Kanayama ◽  
E. J. Shelley ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dissolution Rate ◽  
Organic Solvents ◽  
Spin Coating ◽  
Electron Beam Irradiation ◽  
Fullerene Derivative ◽  
Silicon Substrates ◽  
Beam Irradiation ◽  
Negative Tone ◽  
20 Nm

AbstractWe report systematic studies of the response of C60 derivatives to electron beam irradiation. Films of fourteen different mono, tris and tetra adduct methanofullerene C60 derivatives were produced by spin coating on hydrogen terminated silicon substrates. Exposure of the films to a 20 keV electron beam substantially altered the dissolution rate of the derivative films in organic solvents such as monochlorobenzene. All of the derivatives exhibited negative tone resist behaviour with sensitivities between ∼ 8.5 × 10-4 and ∼ 4 × 10-3 C/cm2 107, much higher than that of C60. Features with widths of ∼ 20 nm were produced using these compounds, and the etch ratios of the compounds were found to be more than twice those of a standard novolac based resist (SAL601).

Crystallization of ion amorphized Ge2Sb2Te5 in nano-structured thin films

2010 ◽  
Vol 1251 ◽  
Author(s):  
Antonio Massimiliano Mio ◽  
Egidio Carria ◽  
Riccardo De Bastiani ◽  
Maria Miritello ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Ion Irradiation ◽  
Interface Velocity ◽  
Amorphous Region ◽  
Beam Irradiation ◽  
Transmission Electron ◽  
The Stability ◽  
20 Nm

AbstractThe crystallization kinetics of nano-structured amorphous Ge2Sb2Te5 (GST) regions (20-100 nm in diameter) obtained by Electron Beam Lithography (EBL) and 40 KeV Ge+ 1014/cm2 ion irradiation of crystalline 20 nm thick films was investigated. The amorphous regions, surrounded by crystalline cubic (fcc) or hexagonal (hcp) phase, were recrystallized by isothermal annealing in the temperature range 80°C - 120°C and by focused electron beam irradiation. The process was followed in situ by transmission electron microscope (TEM). The recrystallization is governed by the growth of the surrounding f.c.c. crystalline interface with a velocity of 2×10-2 nm/s at 110°C. The interface velocity is higher in the h.c.p. substrate less than a factor ten. Local focused electron beam irradiation induces instead crystalline nucleation inside the nano amorphous regions. Similar experiments have been performed on planar ion amorphized thin films lying on both GST crystalline phases. In both cases the recrystallization is mainly associated to the movement of the amorphous-crystalline interface. These results indicate that the stability of the amorphous region, generated by ion irradiation, is severely affected by the adjacent crystalline structure and by the size of the amorphous area, critically involved in the scaling of the PCM-based devices.

Analysis of Charging Phenomena of Polymer Films on Silicon Substrates under Electron Beam Irradiation

2008 ◽  
Vol 47 (6) ◽  
pp. 4890-4892 ◽  
Author(s):  
Masaaki Yasuda ◽  
Kosuke Morimoto ◽  
Yasuaki Kainuma ◽  
Hiroaki Kawata ◽  
Yoshihiko Hirai
Keyword(s):  
Electron Beam ◽  
Polymer Films ◽  
Electron Beam Irradiation ◽  
Silicon Substrates ◽  
Beam Irradiation

Fullerene Derivatives as Novel Resist Materials for Fabrication of MEMS Devices by Electron Beam Lithography

1998 ◽  
Vol 546 ◽  
Author(s):  
A.P.G. Robinson ◽  
R.E. Palmer ◽  
T. Tada ◽  
T. Kanayama ◽  
E.J. Shelley ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electronic Devices ◽  
Silicon Substrates ◽  
Mems Devices ◽  
Order Of Magnitude ◽  
Negative Tone ◽  
20 Nm ◽  
Dry Etch ◽  
Derivatives Of

AbstractThe fabrication of MEMS and electronic devices relies heavily on lithography. We have explored the application of derivatives of C60, as high resolution, high etch durability resists. Spin coating was used to produce films of various methanofullerenes on silicon substrates, with thickness ranging from 20 to 200 nm. These films behave as effective high resolution negative tone electron beam resists allowing sub 20 nm patterning of silicon which compares favorably with other negative tone resists. Organic solvents such as monochlorobenzene and chloroform can be used to develop the exposed films. The films have sensitivities of 4 × 10−3 to 8 × 10−4 C/cm2 for 20 keV electrons, more than an order of magnitude higher than the sensitivity of C60,. The dry etch durabilities of these compounds are considerably higher than those of conventional resists. A silicon grid with hole depth 160 nm and wall thickness 20 nm has been fabricated to demonstrate the high resolution and high etch durability of these resists.

Formation of Titanium Disilicide by Electron Beam Irradiation Under Non Steady State Conditions

1983 ◽  
Vol 25 ◽  
Author(s):  
E A Maydell-Ondrusz ◽  
R E Harper ◽  
A Abid ◽  
P L F Hemment ◽  
K G Stephens
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Silicon Substrates ◽  
Beam Irradiation ◽  
Titanium Disilicide ◽  
X Ray ◽  
Nominal Thickness ◽  
Power Densities ◽  
Backscattering Analysis ◽  
Scanning Electron

ABSTRACTTitanium disilicide was formed by multiply-scanned electron beam irradiation of titanium films of nominal thickness 1200Å on silicon substrates. Samples were annealed at power densities of 2 to 52.5Wcm−2 using times in the range of 1 to a few hundreds seconds. Rutherford backscattering analysis was used to study the metal redistribution and to estimate the approximate compositions and thicknesses of the films. Compounds were identified by X-ray and electron diffraction. Sheet resistance was measured by the four probe technique and surface topography inspected by scanning electron microscopy.The silicide thickness achieved depends only on annealing time for power densities in the range of 20 to 50Wcm−2 and hence is independent of heating rate and peak temperature during the heating cycle.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

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