Carbon-doped InP∕In[sub 0.53]Ga[sub 0.47]As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy
2004 ◽
Vol 22
(5)
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pp. 2499
1997 ◽
Vol 36
(Part 1, No. 3B)
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pp. 1866-1868
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2006 ◽
Vol 24
(3)
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pp. 1564
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1996 ◽
Vol 14
(3)
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pp. 2225
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1992 ◽
Vol 7
(3)
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pp. 425-428
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2007 ◽
Vol 28
(8)
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pp. 679-681
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2006 ◽
Vol 35
(2)
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pp. 266-272
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2000 ◽
1993 ◽
Vol 32
(Part 2, No. 3A)
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pp. L309-L311
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