Angular dependence of Si[sub 3]N[sub 4] etch rates and the etch selectivity of SiO[sub 2] to Si[sub 3]N[sub 4] at different bias voltages in a high-density C[sub 4]F[sub 8] plasma

AbstractHigh density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

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Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

MRS Proceedings ◽

10.1557/proc-468-355 ◽

1997 ◽

Vol 468 ◽

Cited By ~ 15

Author(s):

R. J. Shul ◽

R. D. Briggs ◽

J. Han ◽

S. J. Pearton ◽

J. W. Lee ◽

...

Keyword(s):

Plasma Etching ◽

Chemical Nature ◽

Photonic Devices ◽

High Density ◽

Low Degree ◽

Patterning Technique ◽

High Bond ◽

Dc Bias ◽

Etch Rates ◽

Surface Morphologies

ABSTRACTFabrication of group-Ill nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropie profiles, smooth surface morphologies, etch rates often exceeding 0.5 μm/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as -1.3 μm/min have been reported in ECR generated ICI plasmas at -150 V dc-bias. In this study, we report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl2- and BCl3-based plasma chemistries.

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Selective Etching Of Wide Bandgap Nitrides

MRS Proceedings ◽

10.1557/proc-483-155 ◽

1997 ◽

Vol 483 ◽

Cited By ~ 4

Author(s):

R. J. Shul ◽

C. G. Willison ◽

M. M. Bridges ◽

J. Han ◽

J. W. Lee ◽

...

Keyword(s):

Group Iii Nitrides ◽

High Density ◽

Chamber Pressure ◽

Rf Power ◽

Source Power ◽

Group Iii ◽

Inductively Coupled ◽

Patterning Technique ◽

Etch Rates ◽

Coupled Plasmas

AbstractHigh-density plasma etching has been an effective patterning technique for the group-III nitrides due to ion fluxes which are 2 to 4 orders of magnitude higher than more conventional reactive ion etch (RIE) systems. GaN etch rates exceeding 0.68 μm/min have been reported in Cl2/H2/Ar inductively coupled plasmas (ICP) at -280 V dc-bias. Under these conditions, the etch mechanism is dominated by ion bombardment energies which can induce damage and minimize etch selectivity. High selectivity etch processes are often necessary for heterostructure devices which are becoming more prominent as growth techniques improve. In this study, we will report high-density ICP etch rates and selectivities for GaN, AIN, and InN as a function of cathode power, ICP-source power, and chamber pressure. GaN:AIN selectivities > 8:1 were observed in a Cl2/Ar plasma at 10 mTorr pressure, 500 W ICP-source power, and 130 W cathode rf-power, while the GaN:InN selectivity was optimized at ∼ 6.5:1 at 5 mTorr, 500 W ICP-source power, and 130 W cathode rf-power.

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Composition of ion flux and etch rates for Si and SiO/sub 2/ in high density fluorocarbon plasmas

International Conference on Plasma Science (papers in summary form only received) ◽

10.1109/plasma.1995.531669 ◽

1995 ◽

Author(s):

K.H.R. Kirmse ◽

A.E. Wendt ◽

R.A. Breun

Keyword(s):

Ion Flux ◽

High Density ◽

Fluorocarbon Plasmas ◽

Etch Rates

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Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF[sub 6], C[sub 4]F[sub 8], and O[sub 2] plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1722680 ◽

2004 ◽

Vol 22 (3) ◽

pp. 661 ◽

Cited By ~ 17

Author(s):

Jae-Ho Min ◽

Gyeo-Re Lee ◽

Jin-Kwan Lee ◽

Sang Heup Moon ◽

Chang-Koo Kim

Keyword(s):

Angular Dependence ◽

Fluorocarbon Polymer ◽

Etch Rates

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Planar defects in ordered (Ga,In)P

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106570 ◽

1988 ◽

Vol 46 ◽

pp. 902-903

Author(s):

S. McKernan ◽

C. B. Carter ◽

D. Bour ◽

J. R. Shealy

Keyword(s):

Electron Diffraction ◽

Vapor Phase ◽

Growth Direction ◽

High Density ◽

Ordered Structure ◽

Planar Defects ◽

Diffraction Patterns ◽

Ternary Semiconductors ◽

Anion Species ◽

Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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