Quantitative determination of reaction products by in-line thermal desorption spectroscopy: The system methanol∕Pd(111)

2008 ◽  
Vol 26 (1) ◽  
pp. 78-82 ◽  
Author(s):  
E. Demirci ◽  
A. Winkler
Keyword(s):  
Quantitative Determination ◽  
Thermal Desorption ◽  
Thermal Desorption Spectroscopy ◽  
Reaction Products

Radical and Ionic Reactions of Tetraethylthiuram Disulfide

1960 ◽  
Vol 33 (4) ◽  
pp. 1062-1067
Author(s):  
A. L. Klebanskiĭ ◽  
L. P. Fomina
Keyword(s):  
Carbon Tetrachloride ◽  
Quantitative Determination ◽  
Kinetic Investigation ◽  
Reaction Products ◽  
Ionic Reactions ◽  
Velocity Effect ◽  
Tetraethylthiuram Disulfide

Abstract 1. Investigation of the process of radical dissociation of TETD in carbon tetrachloride indicates that at 145° thiuram radicals are formed which react with the carbon tetrachloride to form (C2H5)2N—C‖S—SCl and CS2. 2. A quantitative determination of the products of the base-influenced dissociation of TETD was carried out. A kinetic investigation of this reaction, in which initiator (K2S2O3) and inhibitor (PBNA) were shown to have no velocity effect whatever, indicates that the process is an ionic one. 3. It is shown that in the reaction of TETD with diethylamine, one of the reaction products appears to be diethylammonium diethyldithiocarbamate.

Quantification of Hydrogen and Determination of the Binding State in a-Si:H:D by Thermal Desorption Spectroscopy

1986 ◽  
Vol 75 ◽  
Author(s):  
Norikuni Yabumoto ◽  
Yasuji Muramatsu ◽  
Masaharu Oshima
Keyword(s):  
Amorphous Silicon ◽  
Thick Film ◽  
Thermal Desorption ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Desorption Spectroscopy ◽  
Hydrogenated Amorphous

AbstractThermal desorption spectroscopy (TDS) is used to quantify the amount of hydrogen in hydrogenated amorphous silicon(a-Si:H) as well as to determine the binding state. It is possible to measure the quantity and binding state of hydrogen in 100–8000Å thick a-Si:H films. Hydrogen is incorporated in the 100Å thick film at a rate of about three times greater than that in the over 1000Å thick film. Hydrogen in all films is bonded to silicon with three kinds of binding states at 2.8, 3.1 and 3.3eV. a-Si:H:D is prepared from SiH4/D2 plasma in order to clarify the origin of hydrogen in the films which are usually deposited from SiH4 and diluted H2 gas. TDS spectra of H2, HD and D2 show that there is more hydrogen from SiH4 in the film in each of the binding states, than from the diluent H2.

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