Capacitance-voltage and photoluminescence study of high-k∕GaAs interfaces controlled by Si interface control layer

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3167361 ◽

2009 ◽

Vol 27 (4) ◽

pp. 2028 ◽

Author(s):

Masamichi Akazawa ◽

Alina Domanowska ◽

Boguslawa Adamowicz ◽

Hideki Hasegawa

Keyword(s):

Photoluminescence Study ◽

Interface Control ◽

High K ◽

Capacitance Voltage ◽

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Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate in Metal-Oxide-Semiconductor Capacitors

ECS Meeting Abstracts ◽

10.1149/ma2010-02/20/1413 ◽

2010 ◽

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Control ◽

Layer Deposition ◽

High K ◽

Electrical Analysis ◽

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Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1834 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1834-1840 ◽

Author(s):

Yasuhiro Dohmae ◽

Satoshi Suzuki ◽

Tamotsu Hashizume ◽

Hideki Hasegawa

Keyword(s):

Interface Control ◽

Capacitance Voltage ◽

Silicon Interface ◽

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Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2952456 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1569 ◽

Author(s):

Masamichi Akazawa ◽

Hideki Hasegawa

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

High K ◽

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Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer

Applied Surface Science ◽

10.1016/s0169-4332(01)00894-7 ◽

2002 ◽

Vol 190 (1-4) ◽

pp. 298-301 ◽

Author(s):

Zhengwen Fu ◽

Seiya Kasai ◽

Hideki Hasegawa

Keyword(s):

Mis Structure ◽

Photoluminescence Study ◽

Interface Control ◽

Silicon Interface ◽

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GaAs high-k dielectric metal-insulator-semiconductor structure having silicon interface control layer

physica status solidi (c) ◽

10.1002/pssc.200779208 ◽

2008 ◽

Vol 5 (9) ◽

pp. 2729-2732 ◽

Author(s):

M. Akazawa ◽

H. Hasegawa

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

High K ◽

High K Dielectric ◽

Silicon Interface ◽

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High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers

Applied Surface Science ◽

10.1016/j.apsusc.2010.03.087 ◽

2010 ◽

Vol 256 (19) ◽

pp. 5708-5713 ◽

Author(s):

M. Akazawa ◽

H. Hasegawa

Keyword(s):

Interface Control ◽

High K ◽

Mos Structures ◽

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Optimization of Si interface control layer thickness for high-k GaAs metal–insulator–semiconductor structures

Materials Science and Engineering B ◽

10.1016/j.mseb.2009.03.009 ◽

2009 ◽

Vol 165 (1-2) ◽

pp. 122-125 ◽

Author(s):

Masamichi Akazawa ◽

Hideki Hasegawa

Keyword(s):

Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Interface Control ◽

High K ◽

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Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

Applied Surface Science ◽

10.1016/s0169-4332(01)00840-6 ◽

2002 ◽

Vol 190 (1-4) ◽

pp. 343-347 ◽

Author(s):

Sanguan Anantathanasarn ◽

Hideki Hasegawa

Keyword(s):

Gaas Surface ◽

Interface Control ◽

Capacitance Voltage ◽

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Control of Silicon Nitride-In0.53Ga0.47As Interface by Ultrathin Silicon Interface Control Layer

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50051-1 ◽

1994 ◽

pp. 277-282

Author(s):

Satoshi Kodama ◽

Hideki Hasegawa

Keyword(s):

Silicon Nitride ◽

Interface Control ◽

Silicon Interface ◽

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Application of Silicon Interface Control Layer Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50050-x ◽

1994 ◽

pp. 271-276 ◽

Author(s):

S. Suzuki ◽

Y.G. Xie ◽

T. Sawada ◽

H. Hasegawa

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

Layer Technique ◽

Silicon Interface ◽

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