GaAs high-k dielectric metal-insulator-semiconductor structure having silicon interface control layer

2008 ◽  
Vol 5 (9) ◽  
pp. 2729-2732 ◽  
Author(s):  
M. Akazawa ◽  
H. Hasegawa
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Interface Control ◽  
High K ◽  
High K Dielectric ◽  
Silicon Interface ◽  
Control Layer

A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

2012 ◽  
Vol 29 (5) ◽  
pp. 057702 ◽  
Author(s):  
Yue-Chan Kong ◽  
Fang-Shi Xue ◽  
Jian-Jun Zhou ◽  
Liang Li ◽  
Chen Chen ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Heterostructure ◽  
High K ◽  
High K Dielectric

scholarly journals Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal–insulator–semiconductor (MIS) diode

2021 ◽  
Vol 130 (24) ◽  
pp. 245701
Author(s):  
Prabhans Tiwari ◽  
Jayeeta Biswas ◽  
Chandan Joishi ◽  
Saurabh Lodha
Keyword(s):  
Electric Field ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High K ◽  
High K Dielectric ◽  
Mis Diode

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type
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