Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors

2017 ◽  
Vol 35 (1) ◽  
pp. 01B103 ◽  
Author(s):  
Ekaterina A. Filatova ◽  
Dennis Hausmann ◽  
Simon D. Elliott
Keyword(s):  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Ab Initio ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

2019 ◽  
Vol 6 (10) ◽  
pp. 1900097 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Ioannis Deretzis ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Layer Deposition ◽  
Highly Uniform ◽  
Seed Layer Free

scholarly journals Nanostructured mullite steam oxidation resistant coatings for silicon carbide deposited via atomic layer deposition

2018 ◽  
Vol 101 (6) ◽  
pp. 2493-2505 ◽  
Author(s):  
Amanda L. Hoskins ◽  
Aidan H. Coffey ◽  
Charles B. Musgrave ◽  
Alan W. Weimer
Keyword(s):  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Steam Oxidation ◽  
Layer Deposition ◽  
Oxidation Resistant

MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures

2018 ◽  
Vol 924 ◽  
pp. 506-510
Author(s):  
Marco Eckstein ◽  
Christian Koppka ◽  
Sebastian Thiele ◽  
Yan Mi ◽  
Rui Xu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Layers ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
High K ◽  
Silicon Silicon

Aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both substrates were determined and compared to aluminium oxide layers deposited with a standard atomic layer deposition equipment. The high-k material fabricated with the developed MOCVD process show comparable or better properties compared to the standard atomic layer deposition process.

An Ab Initio Evaluation of Cyclopentadienyl Precursors for the Atomic Layer Deposition of Hafnia and Zirconia

2019 ◽  
Vol 11 (7) ◽  
pp. 113-121 ◽  
Author(s):  
Aleksandra Zydor ◽  
Simon Elliott ◽  
Thomas Leese ◽  
Fuquan Song ◽  
Simon Rushworth
Keyword(s):  
Atomic Layer Deposition ◽  
Ab Initio ◽  
Atomic Layer ◽  
Layer Deposition

Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates

2018 ◽  
Vol 36 (6) ◽  
pp. 061507 ◽  
Author(s):  
Mariah J. King ◽  
Patrick L. Theofanis ◽  
Paul C. Lemaire ◽  
Erik E. Santiso ◽  
Gregory N. Parsons
Keyword(s):  
Atomic Layer Deposition ◽  
Ab Initio ◽  
Atomic Layer ◽  
Layer Deposition
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