MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures
Keyword(s):
High K
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Aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both substrates were determined and compared to aluminium oxide layers deposited with a standard atomic layer deposition equipment. The high-k material fabricated with the developed MOCVD process show comparable or better properties compared to the standard atomic layer deposition process.
2014 ◽
Vol 78
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pp. 1243-1253
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2020 ◽
Vol 38
(2)
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pp. 022418
2011 ◽
Vol 171
(1)
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pp. 345-349
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2018 ◽
Vol 57
(6S2)
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pp. 06JF05
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