Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing

2018 ◽  
Vol 44 (12) ◽  
pp. 13565-13571 ◽  
Author(s):  
Suhyeong Lee ◽  
Ji Min Kim ◽  
Changhyun Kim ◽  
Hyunwoo Kim ◽  
Hong Jeon Kang ◽  
...  
2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  

2006 ◽  
Vol 496 (2) ◽  
pp. 346-352 ◽  
Author(s):  
Jenni Harjuoja ◽  
Anne Kosola ◽  
Matti Putkonen ◽  
Lauri Niinistö

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.


2015 ◽  
Vol 106 (9) ◽  
pp. 091603 ◽  
Author(s):  
Gang Ye ◽  
Hong Wang ◽  
Serene Lay Geok Ng ◽  
Rong Ji ◽  
Subramaniam Arulkumaran ◽  
...  

CrystEngComm ◽  
2013 ◽  
Vol 15 (46) ◽  
pp. 9949 ◽  
Author(s):  
Grzegorz Luka ◽  
Bartlomiej S. Witkowski ◽  
Lukasz Wachnicki ◽  
Mariusz Andrzejczuk ◽  
Malgorzata Lewandowska ◽  
...  

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