Application of plasma enhanced chemical vapor deposition silicon nitride as a double layer antireflection coating and passivation layer for polysilicon solar cells

1997 ◽  
Vol 15 (3) ◽  
pp. 1020-1025 ◽  
Author(s):  
S. Winderbaum ◽  
F. Yun ◽  
O. Reinhold
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Double Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Antireflection Coating ◽  
Passivation Layer

scholarly journals Silicon nitride anti-reflection coatings for CdS/CuInSe2 thin film solar cells by electron beam assisted chemical vapor deposition

Solar Cells ◽  
1985 ◽  
Vol 14 (3) ◽  
pp. 289-291 ◽  
Author(s):  
B.J. Stanbery ◽  
W.S. Chen ◽  
R.A. Mickelsen ◽  
G.J. Collins ◽  
K.A. Emery ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Cuinse2 Thin Film

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Simple and fast fabrication of a-Si:H/c-Si hetero-junction solar cells by dual-chamber hot wire chemical vapor deposition

2014 ◽  
Vol 68 ◽  
pp. 397-402 ◽  
Author(s):  
Dae Young Jeong ◽  
Kyungmin Kim ◽  
Hee-eun Song ◽  
Jinsoo Song ◽  
Seung Jae Baik ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Dual Chamber
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