Real-time monitoring of surface processes by p-polarized reflectance

1997 ◽  
Vol 15 (3) ◽  
pp. 807-815 ◽  
Author(s):  
N. Dietz ◽  
N. Sukidi ◽  
C. Harris ◽  
K. J. Bachmann
2000 ◽  
Vol 07 (05n06) ◽  
pp. 657-659
Author(s):  
T. FUJINO ◽  
M. KATAYAMA ◽  
Y. YAMAZAKI ◽  
S. INOUE ◽  
J.-T. RYU ◽  
...  

Various surface processes, such as thin film growth or etching, are usually performed by introducing various gases into a vacuum chamber. In order to monitor such surface processes in situ, we have developed an ion scattering and recoiling spectroscopy apparatus equipped with a differential pumping system. The system was applied for real time monitoring of hydrogen-mediated growth of Ge films on Si substrates under a hydrogen gas pressure of 10-4 Torr.


1998 ◽  
Vol 183 (3) ◽  
pp. 323-337 ◽  
Author(s):  
K.J. Bachmann ◽  
N. Sukidi ◽  
C. Höpfner ◽  
C. Harris ◽  
N. Dietz ◽  
...  

2006 ◽  
Vol 175 (4S) ◽  
pp. 521-521
Author(s):  
Motoaki Saito ◽  
Tomoharu Kono ◽  
Yukako Kinoshita ◽  
Itaru Satoh ◽  
Keisuke Satoh

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-1175-Pr3-1182 ◽  
Author(s):  
M. Losurdo ◽  
A. Grimaldi ◽  
M. Giangregorio ◽  
P. Capezzuto ◽  
G. Bruno

2014 ◽  
Author(s):  
Rozaimi Ghazali ◽  
◽  
Asiah Mohd Pilus ◽  
Wan Mohd Bukhari Wan Daud ◽  
Mohd Juzaila Abd Latif ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document