Interaction of titanium with single crystal silicon during rapid electron beam heating

1992 ◽  
Vol 10 (3) ◽  
pp. 1181 ◽  
Author(s):  
F. Mahmood
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Beam Heating ◽  
Electron Beam Heating

Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing

1982 ◽  
Vol 13 ◽  
Author(s):  
J.R. Davis ◽  
R.A. Mcmahon ◽  
H. Ahmed
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Processing Conditions ◽  
Crystal Silicon ◽  
Electron Beam Processing ◽  
Free Region ◽  
Beam Heating ◽  
Lateral Epitaxy ◽  
Electron Beam Heating

ABSTRACTThis paper describes the production of large areas of precisely oriented, defect-free, single crystal silicon films on SiO2 by dual electron beam heating of deposited polysilicon using lateral epitaxy. Defects which occur in the film far from the seeding window are characterised, and the dependence of the area of the defect-free region on the processing conditions is discussed.

Defects and Microstructures in the Surface Layer of Single-crystal Silicon In-duced by High-current Pulsed Electron Beam

2011 ◽  
Vol 25 (12) ◽  
pp. 1313-1317 ◽  
Author(s):  
Xue-Tao WANG ◽  
Qing-Feng GUAN ◽  
Qian-Qian GU ◽  
Dong-Jin PENG ◽  
Yan LI ◽  
...  
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
High Current ◽  
Crystal Silicon ◽  
Pulsed Electron Beam

Structure of Ion-Implanted Silicon After Electron Beam Annealing

1980 ◽  
Vol 38 ◽  
pp. 306-307
Author(s):  
P. J. Smith ◽  
J. M. Leas ◽  
A. T. Leighton
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Amorphous Layer ◽  
High Dose ◽  
Device Structure ◽  
Crystal Silicon ◽  
Crystal Material ◽  
Ion Implanted

High dose ion-implantation into single crystal silicon produces an amorphous layer which must be removed by high temperature annealing. Laser and electron beam annealing, which bring only the top surface of the silicon to a high temperature, can produce more perfect single crystal material than conventional thermal annealing while avoiding the disadvantages of heating the entire wafer. We have found that electron beam annealing of oxide- defined silicon devices can produce dislocation-free single crystal material from amorphous ion-implanted layers, but the results are strongly dependent on both the electron beam parameters and the initial device structure.

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