Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585949 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2949 ◽

Author(s):

F. Ren

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Dry Etching ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl$_{3}$ Dry Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.060202 ◽

2012 ◽

Vol 51 ◽

pp. 060202 ◽

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Ching-Yi Hsu ◽

Chia-Hui Yu ◽

Han-Chieh Ho ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Dry Etching ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2009.04.026 ◽

2009 ◽

Vol 41 (8) ◽

pp. 1517-1521 ◽

Author(s):

Z. Hashempour ◽

A. Asgari ◽

S. Nikipar ◽

M. Abolhasani ◽

M. Kalafi

Keyword(s):

Performance Evaluation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Numerical Performance ◽

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Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in Nanoelectronics

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2361 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1123-1127 ◽

Author(s):

Sanjib Kalita ◽

Subhadeep Mukhopadhyay

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Biomedical Sensors ◽

Electron Mobility Transistors

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Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8726 ◽

2014 ◽

Vol 14 (8) ◽

pp. 6243-6246 ◽

Author(s):

S. Y. Liao ◽

C. C. Lu ◽

T. Chang ◽

C. F. Huang ◽

C. H. Cheng ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

Scaling Effect ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.13 ◽

2006 ◽

Vol 45 (1A) ◽

pp. 13-17 ◽

Author(s):

J.-W. Lee ◽

V. Kumar ◽

I. Adesida

Keyword(s):

Power Density ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Power Density ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

Journal of Applied Physics ◽

10.1063/1.353341 ◽

1993 ◽

Vol 73 (2) ◽

pp. 804-812 ◽

Author(s):

P. Dollfus ◽

C. Bru ◽

P. Hesto

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Physical Limitations

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Microwave performance of 0.25-µm gate length high electron mobility transistors

IEEE Electron Device Letters ◽

10.1109/edl.1985.26074 ◽

1985 ◽

Vol 6 (3) ◽

pp. 142-145 ◽

Author(s):

U.K. Mishra ◽

S.C. Palmateer ◽

P.C. Chao ◽

P.M. Smith ◽

J.C.M. Hwang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Gate length related transfer characteristics of GaN-based high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4795609 ◽

2013 ◽

Vol 102 (11) ◽

pp. 113501

Author(s):

X. F. Zhang ◽

L. Wei ◽

L. Wang ◽

J. Liu ◽

J. Xu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Transfer Characteristics ◽

Electron Mobility Transistors

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Analytical noise model with the influence of shot noise induced by the gate leakage current for submicrometer gate-length high-electron-mobility transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.641356 ◽

1997 ◽

Vol 44 (11) ◽

pp. 1883-1887 ◽

Author(s):

Doo-Sik Shin ◽

J.B. Lee ◽

Hong Shick Min ◽

Jae-Eung Oh ◽

Young June Park ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Noise Model ◽

Gate Length ◽

High Electron ◽

Gate Leakage Current ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3Dry Etching

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.060202 ◽

2012 ◽

Vol 51 (6R) ◽

pp. 060202

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Ching-Yi Hsu ◽

Chia-Hui Yu ◽

Han-Chieh Ho ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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