Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3Dry Etching

2012 ◽  
Vol 51 (6R) ◽  
pp. 060202
Author(s):  
Chien-I Kuo ◽  
Heng-Tung Hsu ◽  
Ching-Yi Hsu ◽  
Chia-Hui Yu ◽  
Han-Chieh Ho ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Microwave performance of 0.25-µm gate length high electron mobility transistors

1985 ◽  
Vol 6 (3) ◽  
pp. 142-145 ◽  
Author(s):  
U.K. Mishra ◽  
S.C. Palmateer ◽  
P.C. Chao ◽  
P.M. Smith ◽  
J.C.M. Hwang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

2006 ◽  
Vol 3 (3) ◽  
pp. 469-472
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Maruyama ◽  
T. Kosugi ◽  
T. Suemitsu ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate
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